2SK2595 Renesas Electronics Corporation., 2SK2595 Datasheet
2SK2595
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2SK2595 Summary of contents
Page 1
... Silicon N-Channel MOS FET UHF Power Amplifier Features High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5. 50% min 836.5 MHz) Compact package capable of surface mounting Outline PLSS0003ZA-A (Previous code : RP8P) Note: Marking is "AX". This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. ...
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... Electrical Characteristics Item Symbol Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage V Input capacitance Output capacitance Output Power Drain Efficiency Main Characteristics Maximum Channel Power Dissipation Curve 100 Case Temperature Typical Transfer Characteristics ...
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... Drain to Source Saturation Voltage vs. Drain Current 0.5 0.2 0 –25 C 0.05 0.02 0.01 0.5 0.1 0.1 0.2 1 Drain Current Input Capacitance vs. Gate to Source Voltage - Gate to Source Voltage V Reverse Transfer Capacitance vs. Drain to Gate Voltage 0.1 0.2 0 Drain to Gate Voltage V Rev.4.00, Feb.14.2005, page Gate to Source Cutoff Voltage vs ...
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... S Parameter vs. Frequency 1 –.2 –.4 –.6 –.8 –1 Test condition 2550 MHz (50 MHz step 500 mA Parameter vs. Frequency 12 90° 135° 180° –135° –90° Test condition ...
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... S Parameter S11 f (MHz) Mag Deg 50 0.814 -126.4 100 0.818 -149.2 150 0.830 -156.6 200 0.849 -160.6 250 0.866 -163.2 300 0.879 -165.0 350 0.893 -166.5 400 0.902 -167.7 450 0.909 -168.7 500 0.917 -169.5 550 0.921 -170.3 600 0.925 -170.9 650 0 ...
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... S11 f (MHz) Mag Deg 50 0.813 -123.5 100 0.819 -147.4 150 0.831 -155.2 200 0.852 -159.6 250 0.868 -162.4 300 0.881 -164.4 350 0.895 -166.0 400 0.904 -167.3 450 0.911 -168.4 500 0.918 -169.3 550 0.923 -170.1 600 0.926 -170.6 650 ...
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... S11 f (MHz) Mag Deg 50 0.817 -120.2 100 0.820 -145.5 150 0.836 -153.9 200 0.856 -158.7 250 0.873 -161.8 300 0.886 -164.0 350 0.899 -165.7 400 0.907 -167.0 450 0.914 -168.1 500 0.920 -169.1 550 0.923 -169.9 600 0.927 -170.5 650 ...
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... S11 f (MHz) Mag Deg 50 0.835 -112.4 100 0.840 -140.6 150 0.852 -150.8 200 0.872 -156.6 250 0.886 -160.3 300 0.896 -162.9 350 0.907 -164.9 400 0.914 -166.4 450 0.919 -167.6 500 0.925 -168.6 550 0.928 -169.6 600 0.930 -170.2 650 ...
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... S11 f (MHz) Mag Deg 50 0.818 -126.6 100 0.829 -149.6 150 0.840 -157.0 200 0.859 -161.1 250 0.873 -163.7 300 0.885 -165.6 350 0.898 -167.0 400 0.906 -168.2 450 0.912 -169.2 500 0.919 -170.0 550 0.923 -170.7 600 0.926 -171.3 650 ...
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... S11 f (MHz) Mag Deg 50 0.819 -123.7 100 0.826 -147.5 150 0.841 -155.4 200 0.861 -159.9 250 0.876 -162.9 300 0.888 -164.9 350 0.901 -166.5 400 0.908 -167.8 450 0.914 -168.8 500 0.920 -169.7 550 0.924 -170.5 600 0.926 -171.0 650 ...
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... S11 f (MHz) Mag Deg 50 0.821 -120.3 100 0.827 -145.4 150 0.844 -153.9 200 0.865 -158.9 250 0.881 -162.2 300 0.893 -164.4 350 0.904 -166.2 400 0.912 -167.6 450 0.917 -168.7 500 0.922 -169.6 550 0.926 -170.5 600 0.928 -171.1 650 ...
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... S11 f (MHz) Mag Deg 50 0.838 -112.1 100 0.844 -140.2 150 0.859 -150.6 200 0.878 -156.6 250 0.890 -160.4 300 0.899 -163.0 350 0.909 -165.0 400 0.914 -166.5 450 0.919 -167.7 500 0.924 -168.7 550 0.927 -169.6 600 0.929 -170.2 650 ...
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... JEITA Package Code RENESAS Code − PLSS0003ZA-A Ordering Information Part Name 2SK2595AX 1000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00, Feb.14.2005, page Previous Code MASS[Typ ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...