2SA1015 Unisonic Technologies, 2SA1015 Datasheet
2SA1015
Manufacturer Part Number
2SA1015
Description
Manufacturer
Unisonic Technologies
Datasheet
1.2SA1015.pdf
(2 pages)
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UTC 2SA1015
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
*Collector current up to 150mA
*High hFE linearity
*Complement to 2SC1815
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
Base current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
UTC
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
BV
Collector-base breakdown voltage
Emitter-base breakdown voltage
Current gain bandwidth product
Base-emitter saturation voltage
CEO
Collector cut-off current
Emitter cut-off current
DC current gain(note)
=-50V
Output capacitance
PARAMETER
Noise Figure
PARAMETER
UNISONIC TECHNOLOGIES CO. LTD
PNP EPITAXIAL SILICON TRANSISTOR
SYMBOL
V
V
BV
BV
BV
CE
BE
I
h
h
I
Cob
CBO
EBO
NF
FE1
FE2
f
CBO
CEO
EBO
(sat)
(sat)
T
( Ta=25°C ,unless otherwise specified )
(Ta=25°C,unless otherwise specified)
SYMBOL
V
V
V
T
Pc
CBO
CEO
EBO
STG
Ic
I
T
B
j
V
TEST CONDITIONS
Ic=-100mA,I
Ic=-100mA,I
CB
V
Ic=-0.1mA,V
V
V
CE
R
CE
Ic=-100µA,I
=-10V,I
V
CE
Ic=-10mA,I
I
G
V
E
=-6V,Ic=-150mA
CB
=1kΩ,f=100Hz
=-10V,Ic=-1mA
=-10µA,Ic=0
EB
=-6V,Ic=-2mA
=-50V,I
=-5V,Ic=0
E
=0,f=1MHz
B
B
CE
=-10mA
=-10mA
B
E
E
1:EMITTER 2:COLLECTOR 3: BASE
=0
=0
=0
=-6V
-65 ~ +150
RATING
-150
400
125
-50
-50
-50
-5
1
MIN
120
-50
-50
25
80
-5
TYP
-0.1
4.0
0.5
MAX
UNIT
-100
-100
700
-0.3
-1.1
mW
7.0
QW-R201-004,B
TO-92
mA
mA
°C
°C
6
V
V
V
UNIT
MHz
nA
nA
pF
dB
V
V
V
V
V
1
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2SA1015 Summary of contents
Page 1
... UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BV =-50V CEO *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Base current ...
Page 2
... UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE1 RANK RANGE 120-240 TYPICAL CHARACTERISTIC CURVES Fig.1 Static characteristics -50 -40 I =-300 µA B -30 =-250 µ =-200 µA I -20 B =-150 µ -10 =-100 µ =-50 µ -12 -16 -20 Collector-Emitter voltage ( V) Fig ...