BCV49 Infineon Technologies, BCV49 Datasheet - Page 2

• Manufacturer Part Number: BCV49
• Manufacturer: Infineon Technologies

Specifications of BCV49

• Packages: SOT89
• Polarity: NPN
• Vceo (max): 60.0 V
• Ptot (max): -
• Hfe (min): 10,000.0
• Ic: 100.0 mA

Thermal Resistance
Parameter
Junction - soldering point
1
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
I
I
I
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
CB
CB
CB
CB
EB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 100 µA, V
= 100 µA, V
= 10 mA, V
= 10 mA, V
= 100 mA, V
= 100 mA, V
= 0.5 A, V
= 0.5 A, V
= 100 mA, I
= 100 mA, I
= 4 V, I
= 30 V, I
= 60 V, I
= 30 V, I
= 60 V, I
C
C
CE
CE
B
B
E
E
E
E
E
E
= 0
CE
CE
= 0
B
B
CE
CE
= 0 , BCV29
= 0 , BCV49
CE
CE
= 0 , BCV29
= 0 , BCV49
= 0 , T
= 0 , T
= 0 , BCV29
= 0 , BCV49
1)
= 5 V, BCV29
= 5 V, BCV49
= 0.1 mA
= 0.1 mA
= 5 V, BCV29
= 5 V, BCV49
= 1 V, BCV29
= 1 V, BCV49
= 5 V, BCV29
= 5 V, BCV49
A
A
= 150 °C, BCV29
= 150 °C, BCV49
1)
1)
A
= 25°C, unless otherwise specified
1)
2
Symbol
R
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
thJS
10000
20000
10000
4000
2000
4000
4000
2000
min.
30
60
40
80
10
-
-
-
-
-
-
-
Values
Value
≤ 20
typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BCV29, BCV49
max.
100
0.1
0.1
1.5
10
10
1
2011-10-05
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
V
µA
nA
-
V