BTS 3046SDR Infineon Technologies, BTS 3046SDR Datasheet - Page 11

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BTS 3046SDR

Manufacturer Part Number
BTS 3046SDR
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 3046SDR

Packages
PG-TO252-3
Channels
1.0
Vds (max)
60.0 V
Id(nom)
3.6 A
Rds (on) (max)
50.0 mOhm
Id(lim) (min)
10.0 A
Figure 7
5.1.1
During failure condition the BTS3046SDR sinks the increased current
5.2
5.2.1
The on-state resistance depends on the junction temperature
Figures show this dependencies for the typical on-state resistance
Temperature dependency of
Figure 8
Datasheet
0,10
0,05
0,00
-50
20
10
Output On-state Resistance
Failure Feedback
Power stage
0
Typical Transfer Characteristic
Typical On-State Resistance,
0
-25
1
R
DS(on)
0
2
at 3 different input voltage conditions:
3
25
R
DS(on)
I
D
= f(
T [ °C ]
4
typ.
= f(
V
11
IN
T
);
50
J
),
V
V
V
D
5
IN
IN
= 13.5 V,
T
[ V ]
J
= 10 V
and on the applied input voltage. The following
R
DS(on)
75
6
I
IN(fault)
T
.
J(start)
Smart low side power switch
.
= 25 °C
7
100
HITFET - BTS3046SDR
Input and Power Stage
8
transferChart _ 3046.emf
Rev. 1.0, 2009-12-06
125
rdson_10V_3046.emf
9
150
10

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