BTS 149 Infineon Technologies, BTS 149 Datasheet - Page 4

• Manufacturer Part Number: BTS 149
• Manufacturer: Infineon Technologies

Specifications of BTS 149

• Packages: P-TO220-3
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 6.4 A
• Rds (on) (max): 20.0 mOhm
• Id(lim) (min): 30.0 A

Characteristics
Initial peak short circuit current limit
V
Current limit
V
T
Dynamic Characteristics
Turn-on time
R
Turn-off time
R
Slew rate on
R
Slew rate off
R
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
I
I
Inverse Diode
Inverse diode forward voltage
I
Electrical Characteristics
Parameter
at T
1 Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
D
D
F
j
IN
IN
L
L
L
L
= -40...+150 °C
= 5*19A, t
= 19 A, T
= 19 A, T
= 1 Ω, V
= 1 Ω, V
= 1 Ω, V
= 1 Ω, V
= 10 V, V
= 10 V, V
j
=25°C, unless otherwise specified
IN
IN
IN
IN
j
j
m
1)
= 25 °C, V
= 150 °C, V
DS
DS
= 0 to 10 V, V
= 10 to 0 V, V
= 0 to 10 V, V
= 10 to 0 V, V
= 300 µS, V
= 12 V
= 12 V, t
V
V
70 to 50% V
50 to 70% V
IN
IN
to 90% I
to 10% I
bb
bb
m
= 32 V
IN
= 350 µs,
= 32 V
bb
bb
bb
bb
= 0 V
D
D
bb
= 12 V
= 12 V
= 12 V
bb
= 12 V
:
:
:
:
Page 4
I
I
t
t
-dV
dV
T
E
V
Symbol
D(SCp)
D(lim)
on
off
jt
AS
SD
DS
DS
/dt
/dt
off
on
6000
1800
min.
150
30
-
-
-
-
-
-
Values
130
typ.
165
1.1
40
40
70
1
1
-
-
max.
100
170
55
3
3
-
-
-
-
-
19.05.2000
BTS 149
A
µs
V/µs
°C
mJ
V
Unit