BTS 3256D Infineon Technologies, BTS 3256D Datasheet

no-image

BTS 3256D

Manufacturer Part Number
BTS 3256D
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 3256D

Packages
PG-TO252-5
Channels
1.0
Vds (max)
40.0 V
Id(nom)
7.5 A
Rds (on) (max)
10.0 mOhm
Id(lim) (min)
42.0 A
H I T F E T ™
Smart Low Side Power Switch
B T S 3 2 5 6 D
10 m smart power single channel low side switch with restart and variable slew rate
D a t a s h e e t
Rev. 1.0, 2009-05-05
A u t o m o t i v e

Related parts for BTS 3256D

BTS 3256D Summary of contents

Page 1

™ Smart Low Side Power Switch smart power single channel low side switch with restart and variable slew rate ...

Page 2

... Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 BTS 3256D Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Voltage and current naming definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1 Pin Assignment BTS 3256D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Supply and Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 ...

Page 3

... Smart Low Side Power Switch BTS3256D 1 Overview The BTS 3256D is a single channel low-side power switch in PG-TO-252-5-11 package providing embedded protective functions. This HITFET™ is designed for automotive and industrial applications with outstanding protection and control features. The power transistor is a N-channel vertical power MOSFET. ...

Page 4

... Micro controller compatible low side power switch with digital feedback for 12V loads Detailed Description The BTS 3256D is an autorestart single channel low-side power switch in PG-TO-252-5-11 package providing embedded protective functions. The device is able to switch all kind of resistive, inductive and capacitive loads. ...

Page 5

... Protection Protection Short Overload circuit Protection Protection SRP Fault GND I GND 5 Smart Low Side Power Switch HITFET - BTS 3256D BTS 3256D Block Diagram Drain GND BlockDiagram.emf Drain V D Terms.emf Rev. 1.0, 2009-05-05 ...

Page 6

... Slew Rate Preset; Used to define slew rate, see 5 GND Ground; Power ground, pin connection needs to carry the load current from Drain Datasheet BTS 3256D (top view ) 6 ( Tab) 6 Smart Low Side Power Switch HITFET - BTS 3256D Pin Configuration GND 5 SRP 4 Drain ...

Page 7

... D 0 D(SC) -0 -0.3 SRP - -55 stg V ESD IN -4 OUT -8 V > D(SC) 7 Smart Low Side Power Switch HITFET - BTS 3256D General Product Characteristics Unit Conditions Max – – – 5.5 V – 5) 5 ...

Page 8

... V 5 – Symbol Limit Values Min. Typ. Max. R – 0.9 1.1 thjC R – 80 – thjA – 45 – 8 HITFET - BTS 3256D General Product Characteristics Unit Conditions – – Unit Conditions K/W – K/W @min. footprint K cm² cooling area, see Figure 4 Rev. 1.0, 2009-05-05 ...

Page 9

... PCB mounted vertical without blown air. Datasheet Single pulse - °C a 1.5 mm epoxy PCB FR4 with Smart Low Side Power Switch HITFET - BTS 3256D General Product Characteristics Zth.emf 2 (one layer thick) copper area for Rev. 1.0, 2009-05-05 ...

Page 10

... Input Circuit Figure 7 shows the input circuit of the BTS 3256D. It’s ensured that the device switches off in case of open input pin. A Zener structure protects the input circuit against ESD pulses. As the BTS 3256D has a supply pin, the operation of the power MOS can be maintained regardless of the voltage on the IN pin, therefore a digital status feedback down to logic low is realized. For readout of the fault information, please refer to Diagnosis Fault Information” ...

Page 11

... IN/Fault 20µA : 100µA GND Figure 7 Input Circuit Datasheet 1.0mA : 3.0mA 11 Smart Low Side Power Switch HITFET - BTS 3256D Supply and Input Stage input.emf Rev. 1.0, 2009-05-05 ...

Page 12

... SUVON 4.0 – 5.5 V SUVOFF V – 0.2 – SUVHY V -0.3 – 0.8 INL V 2.0 – 5.5 INH 100 IN-Fault 12 HITFET - BTS 3256D Supply and Input Stage Unit Conditions V – V – SUVON SUVOFF V – V – 5 fault condition 5.3 V; all fault IN conditions Rev. 1.0, 2009-05-05 ...

Page 13

... T [ ° DSon typ high, T DSon Smart Low Side Power Switch HITFET - BTS 3256D Power Stage shows this dependence for the typical rdson_Tj.emf = high 30 rdson_Vs.emf = 25 °C ambient Rev. 1.0, 2009-05-05 ...

Page 14

... Figure 10 Definition of Power Output Timing for Resistive Load In order to minimize the emission during switching, the BTS 3256D limits the slopes during turn on and off at slow slew rate settings. For best performance of the edge shaping, the supply pin V voltage. For supply voltages other than nominal battery, the edge shaping can differ from the Values in the electrical characteristics table below ...

Page 15

... IN High Low I D Von Figure 12 Switching off an inductive Load While demagnetization of inductive loads, energy has to be dissipated in the BTS 3256D. This energy can be calculated with following equation  – bb D(AZ ------------------------------- - ln 1  --------------------------------- = – D(AZ  L Following equation simplifies under assumption of R  ...

Page 16

... Figure 13 Maximum allowed inductance values for single switch off (EAS 150 ° j,start Datasheet Max =30V Smart Low Side Power Switch HITFET - BTS 3256D Power Stage 50 EAS .emf Rev. 1.0, 2009-05-05 ...

Page 17

... D(ISO) I – 6 DSS – 1 – init – ond_fast t – 11 on_fast offd_fast 17 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage Unit Conditions Max. – high 150 ...

Page 18

... 1.2 2.2 D off_fast |dV/dt| – 0.66 shaping_fast t – 22 ond_slow t – 85 on_slow – offd_slow t 40 150 off_slow 18 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage Unit Conditions Max 2 OPEN; SRP 13 see Figure OPEN; R SRP 13.5 V ...

Page 19

... Limit Values Min. Typ 0.08 0.2 D on_slow 0.08 0.2 D off_slow |dV/dt| – 0.088 shaping_slow -0.3 -1 1.5 mm; 35 Cu Smart Low Side Power Switch HITFET - BTS 3256D Power Stage Unit Conditions Max GND; SRP 13 see Figure GND; R ...

Page 20

... Additonally the device features an adjustable slew rate via the SRP pin. 7.1 Readout of Fault Information The BTS 3256D provides digital status information via an increased current on the IN / Fault pin. The voltage on this pin is pulled down to logic low when a fitting serial resistor is used. An example for the required circuitry is shown in Figure 14 ...

Page 21

... Slew rate 30k 1.2 Slew rate max SRP 21 Smart Low Side Power Switch HITFET - BTS 3256D Control and Diagnosis Unit Conditions Typ. Max. 0.2 0.6 V/µ Ohm SRP ohmic load 0.6 – ...

Page 22

... Thermal Protection The device is protected against over temperature resulting from overload and / or bad cooling conditions. The BTS 3256D has a thermal restart function. When overheating occurs, the device switches off for the restart delay time t . After this time the device restarts if the temperature is below threshold and the IN has logic high restart level ...

Page 23

... IN pin goes low or restart Figure 14. The behavior of V Protective Shut Down Drain / HITFET - BTS 3256D Protection Functions max . lim restart . restart also depends Power_limitation.emf Rev. 1.0, 2009-05-05 ...

Page 24

... Control circuit SRP GND Smart Low Side Power Switch HITFET - BTS 3256D Protection Functions Don’t care res tart protection_behaviour.emf 19. The BTS 3256D is a low side switch. and short circuit inductance short_circuit_schematic.emf Rev. 1.0, 2009-05-05 Figure 17 ...

Page 25

... JSD D(AZ) – D(lim) P 300 400 650 max t 3.5 5 6.5 lim 100 restart t . lim 25 HITFET - BTS 3256D Protection Functions Unit Conditions C – ohmic load W – ...

Page 26

... DI 100µA GND GND to switch ON. INH,min > INFault_min µC V INH,min µC 26 Smart Low Side Power Switch HITFET - BTS 3256D Application Information BTS3256 Fault information 1.0mA SRP : 3.0mA Fault_R1dim.emf while the device fault current is flowing. IN driving stage driving stage Rev. 1.0, 2009-05-05 ...

Page 27

... L,max The maximum current is either defined by the BTS 3256D or the µC driving stage This condition is valid during status feedback operation mode Out of this conditions the minimum and maximum resistor values can be calculated. ...

Page 28

... Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet +0.15 -0.10 ±0.1 A 5x0.6 ±0.1 1.14 0. Smart Low Side Power Switch HITFET - BTS 3256D Package Outlines +0.05 2.3 -0.10 +0.08 B 0.9 -0.04 1 ±0.1 0...0.15 +0.08 0.5 -0.04 0.1 ...

Page 29

... Revision History Version Date Changes Rev. 1.0 2009-05-05 released Datasheet Datasheet Smart Low Side Power Switch HITFET - BTS 3256D 29 Revision History Rev. 1.0, 2009-05-05 ...

Page 30

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

Related keywords