BTS 4160DGA Infineon Technologies, BTS 4160DGA Datasheet - Page 10

no-image

BTS 4160DGA

Manufacturer Part Number
BTS 4160DGA
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 4160DGA

Packages
PG-DSO-14
Channels
2.0
Ron @ Tj = 25°c
160.0 mOhm
Recommended Operating Voltage Min.
5.5 V
Recommended Operating Voltage Max.
20.0 V
Il(sc)
9.0 A
5
The power stages are built by an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
The ON-state resistance
shows the dependencies for the typical ON-state resistance. The behavior in reverse polarity is described in
Chapter
Figure 4
A high signal (See
is optimized in terms of EMC emission.
5.2
Figure 5
Figure 5
Data Sheet
6.4.
shows the typical timing when switching a resistive load.
Power Stage
Output ON-State Resistance
Typical ON-State Resistance
Turn ON / OFF Characteristics
Turn ON/OFF (resistive) timing
V
V
90% V
70% V
30% V
10% V
IN_H_min
IN_L_max
Chapter
S
S
S
S
V
IN
OUT
600
500
400
300
200
100
0
R
5
DS(ON)
8) at the input pin causes the power DMOS to switch ON with a dedicated slope, which
dV/dt
t
ON
depends on the supply voltage as well as the junction temperature T
ON
7
9
11
VS (V)
10
13
dV/dt
OFF
t
OFF
Rds on (m Ohm ) @ +150°C
Rds on (m Ohm ) @ +25°C
Rds on (m Ohm ) @ -40°C
15
17
Switching times.vsd
19
Rev. 1.0, 2008-03-18
t
t
BTS4160DGA
Power Stage
j
.
Figure 4

Related parts for BTS 4160DGA