BTN 7960B Infineon Technologies, BTN 7960B Datasheet - Page 4

• Manufacturer Part Number: BTN 7960B
• Manufacturer: Infineon Technologies

Specifications of BTN 7960B

• Packages: PG-TO263-7
• Operating Range: 5.5 - 28.0 V
• Rds (on) (typ): 16.0 mOhm
• Id(lim): 47.0 A
• Iq (typ): 7.0 µA
• Diagnosis: OV, OT, OC-failure flag, current sense

2
The BTN7960 is part of the NovalithIC™ family containing three separate chips in one package: One p-channel
highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a integrated high current
half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by chip
technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to
the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a
microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current
sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage,
undervoltage, overcurrent and short circuit. The BTN7960 can be combined with other BTN7960 to form H-bridge
and 3-phase drive configurations.
2.1
Figure 1
2.2
Following figure shows the terms used in this data sheet.
Figure 2
Data Sheet
Block Diagram
Block Diagram
Block Diagram
Terms
Terms
INH
SR
IS
IN
V
S
V
IN
V
INH
V
SR
Adjustment
V
Slewrate
Overtemp.
IS
detection
I
I
INH
I
IN
SR
I
IS
Undervolt.
detection
IN
INH
SR
IS
Overvolt.
detection
Digital Logic
G ND
VS
4
I
GND ,
Overcurr.
Detection
Overcurr.
Detection
I
Current
VS
Sense
HS
LS
, -I
I
D( LS)
D( HS)
O UT
LS off
Gate Driver
Gate Driver
HS
LS
HS off
I
OUT
V
SD (LS )
V
, I
DS (HS )
High Current PN Half Bridge
L
V
OUT
OUT
VS
GND
Rev. 1.1, 2007-11-21
Block Diagram
BTN7960