BTS 7930B Infineon Technologies, BTS 7930B Datasheet - Page 23

• Manufacturer Part Number: BTS 7930B
• Manufacturer: Infineon Technologies

Specifications of BTS 7930B

• Packages: P-TO263-7
• Operating Range: 5.5 - 28.0 V
• Rds (on) (typ): 28.0 mOhm
• Id(lim): 31.0 A
• Iq (typ): 7.0 µA
• Diagnosis: OV, OT, OC-failure flag, current sense

6
6.1
Figure 11
6.2
Due to the fast switching times for high currents, special care has to be taken to the PCB
layout. Stray inductances have to be minimized in the power bridge design as it is
necessary in all switched high power bridges. The BTS 7930B has no separate pin for
power ground and logic ground. Therefore it is recommended to assure that the offset
between the ground connection of the slew rate resistor, the current sense resistor and
ground pin of the device (GND / pin 1) is minimized. If the BTS 7930B is used in a H-
bridge or B6 bridge design, the voltage offset between the GND pins of the different
devices should be small as well.
A ceramic capacitor from VS to GND close to each device is recommended to provide
current for the switching phase via a low inductance path and therefore reducing noise
and ground bounce. A reasonable value for this capacitor would be about 470 nF.
The digital inputs need to be protected from excess currents (e.g. caused by induced
voltage spikes) by series resistors in the range of 10 kΩ.
Data Sheet
I/O I/O I/O I/O I/O
Application
Application Example
Layout Considerations
µC
Microcontroller
Application Example: H-Bridge with two BTS 7930B
BTS 7930B
INH
IN
IS
SR
Reset
Vdd
Vss
I/O
GND
OUT
VS
High Current H-Bridge
Voltage Regulator
WO
RO
Q
D
M
22
4278G
GND
TLE
I
High Current PN Half Bridge
VS
OUT
GND
BTS 7930B
Reverse Polarity
INH
SR
IN
IS
Protection
Rev. 2.0, 2006-06-01
50P03L
SPD
BTS 7930B
Application
V
S