CM1200HG-90R Powerex Inc, CM1200HG-90R Datasheet

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CM1200HG-90R

Manufacturer Part Number
CM1200HG-90R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1200HG-90R

Prx Availability
RequestQuote
Voltage
4500V
Current
1200A
Circuit Configuration
Single
Rohs Compliant
No
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
< HVIGBT MODULES >
CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
June 2011
CM1200HG-90R
OUTLINE DRAWING & CIRCUIT DIAGRAM
HVM-1056-C
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1
I
V
1-element in a Pack
High insulated Type
LPT-IGBT / Soft Recovery Diode
AlSiC Baseplate
C··························································
CES···················································
1200A
4500V
Dimensions in mm

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CM1200HG-90R Summary of contents

Page 1

... HVIGBT MODULES > CM1200HG-90R HIGH POWER SWITCHING USE INSULATED TYPE CM1200HG-90R APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM June 2011 HVM-1056-C 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules I C·························································· ...

Page 2

... HVIGBT MODULES > CM1200HG-90R HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol Item V Collector-emitter voltage CES V Gate-emitter voltage GES I C Collector current I CRM I E Emitter current I ERM P Maximum power dissipation tot V Isolation voltage iso V Partial discharge extinction voltage e T Junction temperature ...

Page 3

... HVIGBT MODULES > CM1200HG-90R HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (continuation) Symbol Item V Emitter-collector voltage EC t Reverse recovery time rr I Reverse recovery current rr Q Reverse recovery charge rr Reverse recovery energy E rec(10%) Reverse recovery energy E rec THERMAL CHARACTERISTICS Symbol Item ...

Page 4

... HVIGBT MODULES > CM1200HG-90R HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2500 T = 25°C j 2000 V = 16V 15V GE 1500 1000 500 Collector - Emitter Voltage [V] COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2500 V = 15V GE 2000 T = 25°C j 1500 ...

Page 5

... HVIGBT MODULES > CM1200HG-90R HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) 1000 100 0V 25° 100kHz 1 0.1 1 Collector-Emitter Voltage [V] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL 2800V ±15V 2.7Ω 10Ω G(on) G(off 150nH 125°C ...

Page 6

... HVIGBT MODULES > CM1200HG-90R HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL 2800V 1200A ±15V 150nH 125°C, Inductive load off Gate resistor [Ohm] FREE-WHEEL DIODE REVERSE RECOVERY ...

Page 7

... HVIGBT MODULES > CM1200HG-90R HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES SHORT CIRCUIT SAFE OPERATING AREA (SCSOA ≤ 3200V ±15V 125° 2.7Ω 10Ω j G(on) G(off 1000 2000 3000 Collector-Emitter Voltage [V] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1 ...

Page 8

... HVIGBT MODULES > CM1200HG-90R HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage ...

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