CM800HC-66H Powerex Inc, CM800HC-66H Datasheet

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CM800HC-66H

Manufacturer Part Number
CM800HC-66H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM800HC-66H

Prx Availability
RequestQuote
Voltage
3300V
Current
800A
Circuit Configuration
Single
Rohs Compliant
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM800HC-66H
Manufacturer:
TI
Quantity:
8 972
Part Number:
CM800HC-66H
Manufacturer:
MIT
Quantity:
20 000
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
OUTLINE DRAWING & CIRCUIT DIAGRAM
CM800HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
screwing depth
min. 7.7
3 - M4 NUTS
CM
10.65
57
48.8
C
0.1
0.2
0.3
18
E
130
114
0.2
C
E
61.5
0.5
0.1
G
10.35
0.3
57
0.1
0.2
C
E
6 - 7
screwing depth
min. 16.5
0.1
4 - M8 NUTS
MOUNTING HOLES
I
V
Insulated Type
1-element in a Pack
AISiC Baseplate
C ...................................................................
CES .......................................................
5.2
0.2
CM800HC-66H
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
40
C
G
E
0.3
LABEL
CIRCUIT DIAGRAM
15
0.2
INSULATED TYPE
C
E
Dimensions in mm
C
E
3300V
Jul. 2005
800A

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CM800HC-66H Summary of contents

Page 1

... NUTS 10.65 0.2 48.8 0.3 61.5 screwing depth 18 0.2 min. 7.7 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... Insulated Type 1-element in a Pack AISiC Baseplate NUTS 57 0 10.35 0 MOUNTING HOLES 0.1 screwing depth ...

Page 2

... 2 125 100nH G(on Inductive load ) does not exceed T j rating (150 C). jmax MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 20 800 (Note 1) 1600 800 (Note 1) 1600 9600 –40 ~ +150 –40 ~ +125 –40 ~ +125 ...

Page 3

... Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, = 1W/m·K grease Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 13.0 K/kW — ...

Page 4

... 125 1200 1600 0 MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) = 20V 125 GATE-EMITTER VOLTAGE ( V ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS ( TYPICAL ) T ...

Page 5

... 125 C, Inductive load off 2 E rec 1 0 1200 1600 0 MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE CHARACTERISTICS ( TYPICAL ) = 1650V 800A GATE CHARGE ( C ) HALF-BRIDGE ( TYPICAL ) = 1650V 800A C = 15V off ...

Page 6

... MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE ( TYPICAL ) = 1650V 15V 2.5 G(off ...

Page 7

... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules RECOVERY SAFE OPERATING AREA 2500 125 C j 2000 1500 1000 500 0 3000 4000 0 EMITTER-COLLECTOR VOLTAGE ( V ) MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE REVERSE ( RRSOA ) 2200V, di/dt 3600A/ s 1000 2000 3000 4000 Jul. 2005 ...

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