CM800HB-50H Powerex Inc, CM800HB-50H Datasheet - Page 3

• Manufacturer Part Number: CM800HB-50H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800HB-50H

• Prx Availability: RequestQuote
• Voltage: 2500V
• Current: 800A
• Circuit Configuration: Single
• Rohs Compliant: No

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
1600
1200
800
400
0
COLLECTOR-EMITTER VOLTAGE V
5
4
3
2
1
0
5
4
3
2
1
0
0
0
0
COLLECTOR-EMITTER SATURATION
V
V
V
V
T
GE
GE
GE
GE
j
FORWARD CHARACTERISTICS
=25 C
VOLTAGE CHARACTERISTICS
OUTPUT CHARACTERISTICS
COLLECTOR CURRENT I
=15V
=20V
=14V
=15V
EMITTER CURRENT I
2
400
400
FREE-WHEEL DIODE
( TYPICAL )
( TYPICAL )
( TYPICAL )
V
4
GE
800
800
V
V
=11V
GE
GE
=13V
=12V
6
1200
1200
T
T
T
T
V
V
V
V
E
j
j
j
j
GE
GE
GE
= 25 C
= 125 C
GE
= 25 C
= 125 C
( A )
C
8
=9V
=8V
=7V
=10V
( A )
CE
1600
1600
10
( V )
1600
1200
800
400
10
10
10
10
10
0
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
10
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
COLLECTOR-EMITTER SATURATION
–1
CAPACITANCE CHARACTERISTICS
V
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
T
TRANSFER CHARACTERISTICS
CE
2 3
VOLTAGE CHARACTERISTICS
j
= 25 C
=10V
4
4
5 7 10
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
( TYPICAL )
( TYPICAL )
( TYPICAL )
0
8
8
V
C
C
2 3 5 7 10
GE
ies,
res
= 0V, T
C
12
12
oes
CM800HB-50H
: f = 100kHz
: f = 1MHz
1
I
I
I
T
T
j
C
C
C
= 25 C
j
j
2 3 5 7 10
INSULATED TYPE
= 25 C
= 125 C
16
16
= 1600A
= 800A
= 320A
GE
GE
C
C
C
( V )
( V )
ies
oes
res
CE
20
20
( V )
2
Mar. 2003