CM2400HC-34N Powerex Inc, CM2400HC-34N Datasheet

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CM2400HC-34N

Manufacturer Part Number
CM2400HC-34N
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM2400HC-34N

Prx Availability
RequestQuote
Voltage
1700V
Current
2400A
Circuit Configuration
Single
Rohs Compliant
No
Recommended Gate Driver
VLA539-01R
Interface Circuit Ref Design
BG2A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM2400HC-34N
Manufacturer:
MIT
Quantity:
20 000
4
CM2400HC-34N
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Prepared by
Date
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
S.Iura
I.Umezaki 5-Sep.-2011
Revision: C
CONFIDENTIAL
●I
●V
●Insulated Type
●1-element in a Pack
●AlSiC Baseplate
●Trench Gate IGBT : CSTBT
●Soft Reverse Recovery Diode
WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION
C
NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC
CES
………………………
……………………
CM2400HC-34N
COMPANY PROPRIETARY
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
HVM-1035-C
2400 A
1700 V
INSULATED TYPE
Dimensions in mm
TM
1 of 7

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CM2400HC-34N Summary of contents

Page 1

... Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CONFIDENTIAL MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE COMPANY PROPRIETARY NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION ● ...

Page 2

... ± 0.7 Ω (Note 2) GE G(on 125 ° 100 (Note 2),(Note 5) Inductive load MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE Ratings 1700 ± 20 2400 4800 2400 4800 13100 4000 −40 ~ +150 −40 ~ +125 −40 ~ +125 =15V, T =125°C ...

Page 3

... Note are the integral of 0.1V Note 5. on(10%) off(10%) rec(10%) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CONFIDENTIAL CM2400HC-34N Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ = 1W/m· 100 µm grease (c-f) Conditions M8: Main terminals screw M6: Mounting screw ...

Page 4

... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5000 4000 Tj = 125°C 3000 2000 1000 MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 20V 125° 25° Gate - Emitter Voltage [ 125° 25°C 0 ...

Page 5

... HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL Eoff V Inductive load 4 3 Eon 2 Erec 1 0 4000 5000 0 MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 850V 2400A 25° Gate Charge [µC] = 850V 2400A ±15V 125°C ...

Page 6

... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CONFIDENTIAL FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 = ±15V GE = 1.6 Ω G(off 10000 100 1 10 MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE V = 850V ±15V 0.7 Ω G(on 125°C, Inductive load Irr trr 1000 10000 Emitter Current [A] ...

Page 7

... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CONFIDENTIAL SHORT CIRCUIT SAFE OPERATING AREA 25000 20000 15000 10000 5000 0 1500 2000 1500 2000 MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE (SCSOA) V ≤ 1200V ±15V ≥ 0.7Ω, R ≥ 1.6Ω G(on) G(off 125° ...

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