CM1200DB-34N Powerex Inc, CM1200DB-34N Datasheet - Page 2

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CM1200DB-34N

Manufacturer Part Number
CM1200DB-34N
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1200DB-34N

Voltage
1700V
Current
1200A
Circuit Configuration
Dual
Rohs Compliant
No
Recommended Gate Driver
VLA500K-01R
Recommended Dc To Dc Converter
VLA500K-01R
Interface Circuit Ref Design
BG2A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM1200DB-34N
Manufacturer:
MIT
Quantity:
20 000
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Operating Temperature
Collector-Emitter Voltage (V
Gate-Emitter Voltage (V
Collector Current (DC, T
Peak Collector Current (Pulse)
Emitter Current (T
Emitter Surge Current (Pulse)*
Maximum Power Dissipation (T
Max. Mounting Torque M8 Main Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Max. Mounting Torque M4 Auxiliary Terminal Screws
Module Weight (Typical)
Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.)
Maximum Short Circuit Pulse Width
(V
*1 Pulse width and repetition rate should be such that device junction temperature (T
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Junction temperature (T
CC
= 1200V, V
CES
c
= 25°C)*
j
) should not exceed T
≤ 1700V, V
CE
c
= 80°C)
= 0V)
GE
2
2
= 0V)
c
GE
= 25°C, IGBT Part)*
= 15V, T
j(max)
j
= 25 °C unless otherwise specified
rating (150°C).
j
= 125°C)
3
j
) does not exceed T
opr(max)
rating (125°C).
Symbol
V
V
I
I
T
CM
EM
V
T
t
CES
GES
P
psc
I
T
opr
I
stg
iso
C
E
C
j
*
*
1
1
CM1200DB-34N
-40 to 150
-40 to 125
-40 to 125
1700
1200
2400
1200
2400
6900
4000
±20
177
53
27
1.3
10
Amperes
Amperes
Amperes
Amperes
01/11 Rev. 0
Watts
Volts
Units
Volts
Volts
in-lb
in-lb
in-lb
°C
°C
°C
kg
µs

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