IRG7PH35UD-EP International Rectifier, IRG7PH35UD-EP Datasheet - Page 7

• Manufacturer Part Number: IRG7PH35UD-EP
• Description: 1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
• Manufacturer: International Rectifier

Specifications of IRG7PH35UD-EP

• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 2.80
• Pd @25c (w): 180
• Environmental Options: PbF

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10000
1000
100
10
Fig. 23 - Typ. Capacitance vs. V
0
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
100
1E-006
1E-006
V
1
1
GE
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Cres
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Coes
= 0V; f = 1MHz
200
Cies
D = 0.50
V CE (V)
0.02
0.20
0.10
0.05
0.01
D = 0.50
300
0.02
0.10
0.20
0.05
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
400
1E-005
500
CE
IRG7PH35UDPbF/IRG7PH35UD-EP
600
0.0001
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
τ
1
J
Ci
τ
J
τ
1
Ci= τi/Ri
τ
i/Ri
1
Ci
R
0.001
1
R
1
i/Ri
R
1
R
τ
1
2
R
τ
2
2
Fig. 24 - Typical Gate Charge vs. V
R
16
14
12
10
τ
2
2
8
6
4
2
0
0.001
R
τ
2
2
R
0
2
R
τ
3
3
R
τ
3
3
R
0.01
τ
I
3
3
R
CE
τ
3
3
20
Q G , Total Gate Charge (nC)
τ
R
4
τ
= 20A; L = 2.4mH
4
R
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
4
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V CES = 600V
V CES = 400V
τ
R
4
C
τ
4
R
4
τ
4
Ri (°C/W) τi (sec)
40
τ
0.015
0.235
0.281
0.130
C
τ
Ri (°C/W) τi (sec)
0.01
0.017
0.218
0.299
0.177
0.1
60
0.000043
0.000408
0.003593
0.020382
0.000013
0.000141
0.002184
0.013107
80
GE
0.1
100
1
7