IRGSL10B60KD International Rectifier, IRGSL10B60KD Datasheet - Page 2

• Manufacturer Part Number: IRGSL10B60KD
• Description: 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package
• Manufacturer: International Rectifier

Specifications of IRGSL10B60KD

• Package: TO-262
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 22
• Ic @ 100c (a): 12
• Vce(on)@25c Typ (v): 1.80
• Vce(on)@25c Max (v): 2.2
• Ets Typ (mj): 0.39
• Ets Max (mj): 0.67
• Vf Typ: 1.30
• Pd @25c (w): 104
• Environmental Options: PbF

IRG/B/S/SL10B60KD
Electrical Characteristics @ T
Switching Characteristics @ T
Note
RBSOA
SCSOA
Qg
Qge
Qgc
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
Erec
t
I
V
∆V
V
V
∆
g
I
V
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
fe
on
off
tot
on
off
tot
(BR)CES
CE(on)
GE(th)
FM
ies
oes
res
2
(BR)CES
GE(th)

/
∆
/∆T
T
to
J
J
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
„
are on page 15
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
––– 16.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
600
–––
––– 2.20 2.50
–––
–––
–––
––– 1.30 1.45
–––
––– 1.30 1.45
1.5
3.5
10
FULL SQUARE
1.80 2.20
140
250
390
230
230
350
580
250
620
245
–––
300
––– ±100
4.3
0.3
4.5
-10
7.0
3.0
–––
38
30
20
23
30
20
26
62
22
90
19
–––
–––
–––
247
360
607
262
340
464
804
274
–––
–––
–––
330
105
–––
–––
––– mV/°C V
–––
150
700
5.5
–––
39
29
32
39
28
34
22
V/°C
µA
nA
nC
µJ
ns
µJ
ns
pF
µs
µJ
ns
V
V
V
S
V
A
I
V
V
I
V
Ls = 150nH
I
V
Ls = 150nH, T
I
V
Ls = 150nH
I
V
Ls = 150nH, T
V
V
f = 1.0MHz
T
V
T
V
T
V
V
V
V
I
I
V
V
V
V
I
I
V
C
C
C
C
C
C
C
C
C
J
CC
J
J
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
GE
GE
GE
CE
CE
CE
GE
GE
GE
= 10A
= 10A, V
= 10A, V
= 10A, V
= 10A, V
= 10A, V
= 10A, V
= 10A
= 10A
= 150°C
= 150°C, I
= 150°C, Vp =600V,R
= 500V, V
= 400V
= 15V
= 15V,R
= 15V, R
= 15V,R
= 15V, R
= 0V
= 30V
= 360V, V
= 400V, I
= 15V,R
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
GE
GE
, I
, I
C
CC
CC
CC
CC
C
GE
GE
CE
CE
C
C
C
Conditions
G
G
G
Conditions
C
= 500µA
= 1.0mA, (25°C-150°C)
T
G
G
GE
F
J
J
= 250µA
= 1.0mA, (25°C-150°C)
= 400V
= 400V
= 400V
= 400V
= 15V
= 15V
= 10A, PW=80µs
J
= 47Ω, L = 200µH
= 47Ω, L = 200µH
GE
= 47Ω, Ls = 150nH
= 44A, Vp =600V
= 600V
= 600V, T
= 47Ω, L = 200µH
= 47Ω, L = 200µH
= 10A, L = 200µH
= 25°C
= 150°C
= 150°C
= +15V to 0V,
= +15V to 0V
T
T
www.irf.com
J
J
= 25°C ƒ
= 150°C ƒ
G
T
J
J
= 150°C
= 47Ω
= 150°C
R
G
= 47Ω
CT4,WF3
5, 6,7
9,10,11
9,10,11
12
17,18,19
Ref.Fig.
20, 21
WF1WF2
Ref.Fig.
13,15
14, 16
WF4
CT4
CT4
CT3
CT1
WF1
WF2
CT2
8
CT4
CT4
4