IRG7IC28UPBF International Rectifier, IRG7IC28UPBF Datasheet - Page 2

• Manufacturer Part Number: IRG7IC28UPBF
• Description: 600V Discrete PDP Trench IGBT in a TO-220AB package
• Manufacturer: International Rectifier

Specifications of IRG7IC28UPBF

• Package: TO-220AB
• Circuit: Discrete
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 25
• Ic @ 100c (a): 12
• Vce(on)@25c Typ (v): 1.70
• Vce(on)@25c Max (v): 1.95
• Pd @25c (w): 40
• Environmental Options: PbF

Notes:

‚
ƒ
IRG7IC28UPbF
∆ΒV
∆V
Electrical Characteristics @ T
BV
V
V
V
I
I
g
Q
Q
t
t
t
t
t
t
t
t
t
E
ESD
C
C
C
L
L
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
st
fe
C
E
(BR)ECS
CE(on)
GE(th)
PULSE
ies
oes
res
g
gc
R
Half sine wave with duty cycle <= 0.02, ton=1.0µsec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GE(th)
CES
θ
CES
is measured at
/∆T
/∆T
J
J
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Collector-to-Emitter Voltage
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
Human Body Model
Machine Model
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
Internal Emitter Inductance
T
J
of approximately 90°C.
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
600
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
2.2
15
1880
0.57
1.25
1.42
1.70
1.96
2.97
1.75
320
770
930
–––
–––
–––
305
–––
–––
260
145
280
–––
-11
0.5
4.5
7.5
30
90
55
70
25
30
35
25
40
75
45
(Per EIA/JEDEC standard EIA/JESD22-A115)
-100
1.95
–––
–––
–––
–––
–––
–––
–––
–––
––– mV/°C
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.7
20
(Per JEDEC standard JESD22-A114)
V/°C
nC
nH
µA
nA
pF
ns
ns
ns
µJ
V
V
V
V
S
Class H1C (2000V)
Class M4 (425V)
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
T
I
R
T
V
L = 220nH, C= 0.40µF, V
V
L = 220nH, C= 0.40µF, V
V
V
V
ƒ = 1.0MHz
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
C
J
J
GE
GE
GE
GE
GE
GE
GE
GE
CE
CE
CE
CE
CE
GE
GE
CE
CE
CC
CC
CC
GE
CE
G
G
= 40A, V
= 40A, V
= 25°C
= 150°C
= 22Ω, L=100µH
= 22Ω, L=100µH
= 0V, I
= 0V, I
= 15V, I
= 15V, I
= 15V, I
= 15V, I
= 15V, I
= 15V, I
= V
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 30V
= -30V
= 25V, I
= 400V, I
= 240V, V
= 240V, R
= 240V, R
= 0V
= 30V
GE
, I
CE
CE
CC
CC
CE
CE
CE
CE
CE
CE
CE
CE
C
= 1.0mA
= 1.0A
Conditions
= 400V
= 400V
GE
GE
GE
GE
GE
= 250µA
G
G
= 40A
= 12A
= 24A
= 40A
= 70A
= 160A
= 40A, T
= 40A, V
= 5.1Ω, T
= 5.1Ω, T
= 0V
= 0V, T
= 0V, T
= 0V, T
= 15V, R
CE
= 1.0mA
J
GE
J
J
J
= 150°C
J
J
= 100°C
= 125°C
= 150°C
GE
GE
www.irf.com
= 15V
G
= 25°C
= 100°C
= 5.1Ω
= 15V
= 15V