IRG4RC10KTRPBF International Rectifier, IRG4RC10KTRPBF Datasheet
IRG4RC10KTRPBF
Specifications of IRG4RC10KTRPBF
Related parts for IRG4RC10KTRPBF
IRG4RC10KTRPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125° 15V GE • Generation 4 IGBT design provides higher efficiency than Generation ...
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IRG4RC10K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...
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Square wave: 2 60% of rated voltage 1 Ideal diodes 0 0.1 Fig Typical Load Current vs. Frequency 100 150 20µs ...
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IRG4RC10K 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 ...
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1MHz ies res oes ce gc 300 C ies 200 100 C oes ...
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IRG4RC10K 1 Ohm 100 150 C ° 480V 15V 1.0 GE 0.8 0.6 0.4 0 Collector Current (A) C Fig Typical ...
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Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.2 65) 6.35 (.2 50 5.46 (.2 15 ...
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IRG4RC10K Tape & Reel Information TO-252AA ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...