IR3519SPBF International Rectifier, IR3519SPBF Datasheet - Page 3

• Manufacturer Part Number: IR3519SPBF
• Description: Synchronous MOSFET Gate Driver IC with extended voltage range high-speed gate driver optimized for switching power supply applications.
• Manufacturer: International Rectifier

Specifications of IR3519SPBF

• Package: 8-Lead SON
• Circuit: X-Phase Phase IC
• Iout (a): 2.0A Gate Driver
• Pbf: PbF Option Available

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LGATE low to UGATE high
delay
UGATE low to LGATE high
delay
Minimum Pulse Width
Passive Gate Pull-Down
Resistance
PH Bias Current
VDD Under Voltage Lockout Comparator (V
Start Threshold
Stop Threshold
Hysteresis
PWM Input
UGATE Threshold Voltage,
V
UGATE Threshold Voltage,
V
UGATE Threshold
Hysteresis
LGATE Threshold Voltage,
V
LGATE Threshold Voltage,
V
LGATE Threshold Hysteresis
Tri-State Bias voltage,
V
Input Bias Current
Tri-State Time Constant
UGATE TH
UGATE TH
LGATE TH
LGATE TH
PWM TRI
PARAMETER
BOOT = VDD = 7V, PH =0V GND
= 0V, measure time from LGATE
falling to 1V to UGATE rising to
1V.
BOOT = VDD = 7V, PH =0V GND
= 0V, measure time from UGATE
falling to 1V to LGATE rising to
1V.
Note 1
Measure with PWM=Tri-state,
PH=1V
Start – Stop
PWM rising
PWM falling
PWM falling
PWM rising
V(PWM) = 0V
V(PWM) = 3.3V
V(PWM) = 5V
C
V(PWM) = 0V release to LGATE
< 1V. Note 1
C
V(PWM) = 3.3V release to
HGATE < 1V. Note 1
C
V(PWM) = 5V release to HGATE
< 1V. Note 1
PWM
PWM
PWM
= 20pF, Measure time from
= 20pF, Measure time from
= 20pF, Measure time from
www.irf.com
TEST CONDITION
UVLO
)
-260
MIN
5.65
0.74
140
370
5.4
2.0
1.9
0.6
1.2
30
30
5
5
TYP
-210
200
460
190
270
380
6.0
5.7
2.2
2.1
0.8
0.9
1.6
15
15
30
20
90
90
-2
MAX
-160
170
170
270
570
-10
6.3
6.1
0.4
2.4
2.3
1.0
1.1
1.8
50
IR3519
UNIT
8/15/08
mV
mV
kΩ
μA
μA
μA
μA
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
V
V