CLA30E1200HB IXYS, CLA30E1200HB Datasheet - Page 5

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CLA30E1200HB

Manufacturer Part Number
CLA30E1200HB
Description
Phase Control Thyristors, SCRs
Manufacturer
IXYS
Datasheet

Specifications of CLA30E1200HB

Vrrm, Vdrm, (v)
1200
Itavm, (a)
30
@ Tc, (°c)
120
Itrms, (a)
47
Itsm, 10ms, Tvj = 45°c, (a)
300
Itsm, 8.33ms, Tvj = 45°c, (a)
325
[dv/dt] C, (v/µs)
500
Vt0, (v)
0.86
Rt, (mohm)
12.6
Tvjm, (°c)
150
Rthjc, Max, (k/w)
0.55
Rthch, (k/w)
0.25
Package Style
TO-247AD
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
[K/W]
[A]
V
[V]
Z
I
T
0.01
G
thJC
0.1
60
50
40
30
20
10
0.001
4
3
2
1
0
0
1
0.5
0
Fig. 7 Transient thermal impedance junction to case
Fig. 1 Forward characteristics
T
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
I
GD
VJ
: T
= 150°C
A
125°C
VJ
= 125°C
B
1.0
25
T
VJ
I
V
B
G
= 25°C
T
[mA]
I
GD
[V]
B
0.01
: T
1.5
50
VJ
= 25°C
C
2.0
75
I
t [s]
TSM
[A]
[µs]
t
0.1
gd
400
300
200
100
10
10
10
10
0.001
0
2
1
0
-1
10
Fig. 2 Surge overload current
Fig. 5 Gate controlled delay time t
-2
50 Hz, 80% V
I
TSM
Data according to IEC 60747and per diode unless otherwise specified
0.01
10
: crest value, t: duration
-1
I
1
RRM
G
t [s]
T
[A]
VJ
T
VJ
= 45°C
= 125°C
0.1
10
0
typ.
lim.
10
1
10
1
gd
I
[A
TAVM
[A]
I
2
2
t
s]
1000
100
Constants for Z
60
50
40
30
20
10
CLA 30 E 1200 HB
0
1
0
Fig. 6 Max. forward current at
Fig. 3 I
V
i
1
2
3
4
5
R
20 40 60 80 100 120 140 160
= 0 V
R
thi
180° sine
0.024
0.059
0.128
0.306
0.033
case temperature
2
(K/W)
t versus time (1-10 s)
2
T
T
VJ
thJC
VJ
T
= 45°C
case
= 125°C
3
t [ms]
calculation:
0.0005
0.0018
0.014
0.08
0.56
[°C]
4 5 6 7 8 9 0
t
i
(s)
20110209d
1

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