MCNA120UI2200TED IXYS, MCNA120UI2200TED Datasheet - Page 2

• Manufacturer Part Number: MCNA120UI2200TED
• Description: 3-Phase Rectifier Bridge with Brake
• Manufacturer: IXYS

Specifications of MCNA120UI2200TED

• Vrrm, Rect, (v): 2200
• Idav, Rec, (a): 117
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 80
• Vces, Igbt, (v): 1700
• Ic80, Igbt, (a): 80
• Vrrm, Fast Diode, (v): 1700
• If(av), Fast Diode, (a): 50
• Trr, Fast Diode, (ns): 550
• Package Style: E2-Pack

Symbol
V
V
V
I
V
r
R
P
I
I²t
C
P
P
(di/dt)
(dv/dt)
V
I
V
I
I
I
t
t
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Thyristor
I
R
R/D
TSM
GT
GD
L
H
DAV
T
gd
q
RSM/DSM
RRM/DRM
T0
tot
GM
GAV
GT
GD
T
thCH
J
thJC
cr
cr
Definition
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
bridge output current
threshold voltage
slope resistance
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
for power loss calculation only
V
V
I =
I =
I =
I =
T =
rectangular
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V =
t = 30 µs
t =
T
t = 200 µs;
I
V = ⅔ V
R
V = 6 V
V = 6 V
V = ⅔ V
t
I
V = 6 V
V = ½ V
I
V =
di/dt =
T
T
T
T
P
P
P
G
G
G
p
C
VJ
D
R/D
R/D
R
D
D
D
D
D
R
GK
= 0.45
= 10
= 0.45
= 0.45
= 150 °C; f = 50 Hz
300 µs
=
=
= ∞; method 1 (linear voltage rise)
Conditions
400
100 V; I
2200
2200
80
40
80
40
80
°C
10
µs
A; V = ⅔ V
DRM
DRM
DRM
A
A
A
A
V
A;
A;
R
Data according to IEC 60747and per diode unless otherwise specified
A/µs;
V
V
di /dt
GK
f = 1 MHz
di /dt
G
D
di /dt
T
= ∞
G
G
= 40
d =
dv/dt =
= 0.45
= 0.45
= 0.45
⅓
DRM
A;
A/µs
V = ⅔ V
20
D
A/µs
A/µs
V/µs;
non-repet., I = 40 A
repetitive, I =
t
DRM
p
= 200
T
T
T
T
T
T
T
T
T
T
V
T
V
T
V
T
V
T
T
T = 150 °C
T =
T =
T =
T =
T =
T =
T =
T =
T =
MCNA120UI2200TED
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
R
VJ
R
VJ
R
VJ
R
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
T
T
µs
= 25°C
= 25°C
= 25°C
=
= 25°C
=
=
=
= 25°C
= 45°C
=
= 45°C
=
= 25°C
=
= 0 V
= 0 V
= 0 V
= 0 V
150
150
125
150
150
150
150
150
125
-40
-40
120 A
25
25
25
25
25
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
min.
Ratings
typ.
0.10
500
18
max.
preliminary
2300
2200
1000
1.33
1.70
1.36
1.88
0.83
13.6
0.65 K/W
1.25
1.22
117
190
500
540
425
460
905
880
150
500
150
150
100
0.5
1.4
1.6
0.2
50
10
10
70
5
5
2
20120307a
kA²s
kA²s
A/µs
A/µs
V/µs
K/W
Unit
mΩ
mA
A²s
A²s
mA
mA
mA
mA
mA
µA
pF
µs
µs
W
W
W
W
V
V
V
V
V
V
A
V
A
A
A
A
V
V
V