VVZB135-16ioXT IXYS, VVZB135-16ioXT Datasheet - Page 8

• Manufacturer Part Number: VVZB135-16ioXT
• Description: 3-Phase Rectifier Bridge with Brake
• Manufacturer: IXYS

Specifications of VVZB135-16ioXT

• Vrrm, Rect, (v): 1600
• Idav, Rec, (a): 135
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 80
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 84
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 32
• Trr, Fast Diode, (ns): 40
• Package Style: E2

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
K
[A]
[K/W]
Z
Fast Recovery Diode
I
F
f
thJC
0.01
2.0
1.5
1.0
0.5
0.0
0.1
80
70
60
50
40
30
20
10
0.001
0
1
Fig. 4 Typ. dynamic parameters
0
0
Fig. 1 Typ. forward current I
Fig. 7 Typ. transient thermal impedance junction to case
I
T
Q
RM
VJ
R
= 125°C
Q
40
25°C
r
1
, I
RM
T
VJ
V
, versus T
80
F
[°C]
[V]
2
120
VJ
0.01
3
F
160
vs. V
t [s]
[ns]
F
t
[µC]
rr
Q
r
Fig. 2 Typ. reverse recovery charge Q
220
200
180
160
140
120
Fig. 5 Typ. recovery time t
5
4
3
2
1
0
100
0
T
i
1 0.072 0.002
2 0.037 0.03
3 0.156 0.03
4 0.055 0.08
V
VJ
versus -di
R
200
[K/W] [s]
I
0.1
= 125°C
F
= 800 V
R i
= 60 A
IGBT
-di
30 A
15 A
-di
400
τ i
F
F
/dt [A/µs]
F
/dt [A/µs]
I
/dt
F
T
V
= 60 A
[K/W]
VJ
600
0.465
0.179
0.256
-
R i
R
30 A
15 A
= 125°C
= 800 V
FRD
800
rr
-
τ i
0.0052
0.0003
0.0397
vs. -di
[s]
diode
IGBT
1000
1000
1
F
/dt
r
[Ω]
V
R
[V]
I
[A]
RM
FR
10000
1000
120
100
100
60
50
40
30
20
10
80
60
40
20
0
0
Fig. 3 Typ. peak reverse current I
Fig. 6 Typ. peak forward voltage
0
Fig. 8 Typ. thermistor resistance
0
0
V
I
VVZB 135-16IOXT
F
FR
= 60 A
25
200
200
30 A
15 A
versus -di
V
FR
50
versus temperature
T
-di
I
-di
F
400
400
VJ
and t
T [°C]
F
F
=
= 125°C
/dt [A/µs]
/dt [A/µs]
75
T
fr
V
VJ
600
600
30 A
F
versus di
R
/dt
100
= 125°C
= 800 V
800
800 1000
125
F
/dt
1000
t
rr
150
20110907b
1.2
1.0
0.8
0.6
0.4
0.2
0.0
[µs]
RM
8 - 8
t
rr