DNA30EM2200PC IXYS, DNA30EM2200PC Datasheet

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DNA30EM2200PC

Manufacturer Part Number
DNA30EM2200PC
Description
Rectifier (Standard) Diodes
Manufacturer
IXYS
Datasheet

Specifications of DNA30EM2200PC

Vrrm, (v)
2200
Ifavm, Total, (a)
30
Ifavm, Per Diode, (a)
30
@ Tc, (°c)
140
Prsm, (kw)
-
Ifrms, (a)
35
Ifsm, 10 Ms, Tvj = 45°c, (a)
370
Vt0, (v)
0.88
Rt, (mohms)
12.9
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.70
Rthch, (k/w)
0.25
Package Style
TO-263AB
High Voltage Standard Rectifier
Single Diode
Part number
DNA 30 EM 2200 PC
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Symbol
V
I
V
I
V
r
R
T
P
I
I²t
C
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Features / Advantages:
R
FAV
FSM
F
RRM
F0
VJ
tot
F
thJC
J
Definition
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
value for fusing
junction capacitance
for power loss calculation only
Applications:
● Diode for main rectification
● For single and three phase
Conditions
V =
V =
I =
I =
I =
I =
rectangular
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V =
F
F
F
F
R
R
R
bridge configurations
2200
2200
700
30
60
30
60
Data according to IEC 60747and per diode unless otherwise specified
1
3
A
A
A
A
V
V
V; f = 1 MHz
d =
0.5
2
T
T
T
T
T
T
T
T
T
V
T
V
T
V
T
V
T
VJ
VJ
R
VJ
R
VJ
R
VJ
R
VJ
VJ
VJ
VJ
C
VJ
C
VJ
DNA 30 EM 2200 PC
= 25°C
= 25°C
=
= 25°C
=
=
=
= 25°C
=
=
=
=
= 25°C
= 0 V
= 0 V
= 0 V
= 0 V
150
150
140
175
150
150
45
45
● Housing:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
V
I
V
Package:
°C
°C
°C
°C
°C
°C
°C
°C
FAV
RRM
F
min.
=
=
=
-55
R a t i n g s
TO-263 (D2Pak)
2200
typ.
1.26 V
30
7
Backside: anode
max.
2200
1.28
1.59
1.26
1.61
0.88
12.9
0.70 K/W
V
A
175
210
370
400
315
340
685
665
495
480
1.5
40
30
20110520a
Unit
mΩ
mA
A²s
A²s
A²s
A²s
µA
pF
°C
W
V
V
V
V
V
A
V
A
A
A
A

Related parts for DNA30EM2200PC

DNA30EM2200PC Summary of contents

Page 1

... I max. forward surge current FSM I²t value for fusing C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Applications: ● Diode for main rectification ● For single and three phase bridge configurations ...

Page 2

... Ordering DNA 30 EM 2200 PC Standard IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Conditions per terminal Part Name Marking on Product DNA30EM2200PC Similar Part Package DNA30E2200PC TO-263AB (D2Pak) DNA30E2200PA TO-220AC (2) DNA30E2200FE i4-Pac (2HV) Data according to IEC 60747and per diode unless otherwise specified ...

Page 3

... Outlines TO-263 (D2Pak 10.92 (0.430) 1.78 (0.07) 2.54 (0.100) IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved A Supplier Option Data according to IEC 60747and per diode unless otherwise specified DNA 30 EM 2200 PC 20110520a ...

Page 4

... Fig. 4 Power dissipation vs. direct output current & ambient temperature, sine 180° 0.8 0.6 Z thJC 0.4 [K/W] 0.2 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 400 300 I FSM 200 [A] 100 0 2.5 0.001 ...

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