DLA60I1200HA IXYS, DLA60I1200HA Datasheet
DLA60I1200HA
Manufacturer Part Number
DLA60I1200HA
Description
Rectifier (Standard) Diodes
Manufacturer
IXYS
Datasheet
1.DLA60I1200HA.pdf
(3 pages)
Specifications of DLA60I1200HA
Vrrm, (v)
1200
Ifavm, Total, (a)
60
Ifavm, Per Diode, (a)
60
@ Tc, (°c)
150
Prsm, (kw)
-
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj = 45°c, (a)
850
Vt0, (v)
0.80
Rt, (mohms)
3.0
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.30
Rthch, (k/w)
0.25
Package Style
TO-247AD
Low Voltage Standard Rectifier
Single Diode
Part number
DLA 60 I 1200 HA
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Symbol
V
V
V
r
T
P
I
I²t
C
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
I
I
R
Features / Advantages:
R
FAV
FSM
F
RRM
F0
VJ
tot
F
thJC
J
average forward current
Definition
max. repetitive reverse voltage
reverse current
forward voltage
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
value for fusing
junction capacitance
for power loss calculation only
Applications:
● Diode for main rectification
● For single and three phase
Conditions
V =
V =
I =
I =
I =
I =
rectangular
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V =
F
F
F
F
R
R
R
bridge configurations
1200
1200
120
120
400
60
60
Data according to IEC 60747and per diode unless otherwise specified
A
A
A
A
3
V
V
V; f = 1 MHz
d =
0.5
1
T
T
T
T
T
T
T
T
T
V
T
V
T
V
T
V
T
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
R
VJ
R
VJ
R
VJ
R
VJ
= 25°C
= 25°C
=
= 25°C
=
=
=
= 25°C
=
=
=
=
= 25°C
= 0 V
= 0 V
= 0 V
= 0 V
150
150
150
175
150
150
45
45
DLA 60 I 1200 HA
● Housing:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
V
I
V
Package:
°C
°C
°C
°C
°C
°C
°C
°C
FAV
RRM
F
min.
=
=
=
-55
R a t i n g s
TO-247
1200
typ.
33
Backside: cathode
60
1 V
max.
1200
1.10
1.26
1.00
1.16
0.80
0.30 K/W
V
A
3.62
3.52
2.63
2.53
175
500
850
920
725
780
0.1
tentative
20
60
3
20090720
kA²s
kA²s
kA²s
kA²s
Unit
mΩ
mA
µA
pF
°C
W
V
V
V
V
V
A
V
A
A
A
A
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DLA60I1200HA Summary of contents
Page 1
... FSM I²t value for fusing C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved 3 1 Applications: ● Diode for main rectification ● For single and three phase bridge configurations ...
Page 2
... DLA 60 I 1200 HA Standard IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved Conditions per pin 1) Part Name Marking on Product DLA60I1200HA Data according to IEC 60747and per diode unless otherwise specified DLA 60 I 1200 HA Ratings min. typ. 0.25 -55 0.8 ...
Page 3
... Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved DLA 60 I 1200 HA L Dim. Millimeter Min. A 19.81 20.32 B 20.80 21.46 C 15.75 16.26 D 3.55 E 4.32 F 5 1.0 K 10 0.4 N 1.5 N Data according to IEC 60747and per diode unless otherwise specified ...