DSA70C200HB IXYS, DSA70C200HB Datasheet - Page 2

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DSA70C200HB

Manufacturer Part Number
DSA70C200HB
Description
Manufacturer
IXYS
Datasheet

Specifications of DSA70C200HB

Vrrm, (v)
200
Ifavm, D = 0.5, Total, (a)
70
Ifavm, D = 0.5, Per Diode, (a)
35
@ Tc, (°c)
150
Vf, Max, Tvj =125°c, (v)
0.79
@ If, (a)
35
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.70
Package Style
TO-247AD
Symbol
I
R
T
Weight
M
F
1)
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
RMS
C
stg
In case of (1) and a common cathode/anode configu ration with a non-isolated backside,
the current capability can be increased by connecting the backside.
thCH
I
D
RMS
Marking on product
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) .
Assembly Code
DateCode
Definition
RMS current
thermal resistance case to heatsink
storage temperature
mounting torque
mounting force with clip
Logo
Standard
Ordering
Product Marking
XXXXXX
YYWW
abcdef
DSA 70 C 200 HB
Part Name
Conditions
per terminal
Marking on Product
DSA70C200HB
Data according to IEC 60747and per diode unless otherwise specified
1)
Delivering Mode
Tube
Part number
200
HB
Base Qty Code Key
70
D
C
S
A
DSA 70 C 200 HB
=
=
=
=
=
=
=
30
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-247AD (3)
509195
min.
-55
0.8
20
Ratings
typ.
0.25
6
max.
150
120
1.2
tentative
70
20100601
Unit
K/W
Nm
°C
N
A
g

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