DSA10C150PB IXYS, DSA10C150PB Datasheet - Page 2

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DSA10C150PB

Manufacturer Part Number
DSA10C150PB
Description
Manufacturer
IXYS
Datasheet

Specifications of DSA10C150PB

Vrrm, (v)
150
Ifavm, D = 0.5, Total, (a)
10
Ifavm, D = 0.5, Per Diode, (a)
5
@ Tc, (°c)
155
Vf, Max, Tvj =125°c, (v)
0.71
@ If, (a)
5
Tvjm, (°c)
175
Rthjc, Max, (k/w)
4.80
Package Style
TO-220AB
Symbol
I
R
T
Weight
M
F
1)
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
RMS
C
stg
In case of (1) and a common cathode/anode configu ration with a non-isolated backside,
the current capability can be increased by connecting the backside.
thCH
I
D
RMS
Marking on product
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) .
Assembly Code
DateCode
Definition
RMS current
thermal resistance case to heatsink
storage temperature
mounting torque
mounting force with clip
Logo
Standard
Ordering
Product Marking
XXXXXX
abcdef
DSA 10 C 150 PB
YYWW
Part Name
Conditions
per terminal
Marking on Product
DSA10C150PB
Data according to IEC 60747and per diode unless otherwise specified
1)
Delivering Mode
Tube
Part number
150
PB
Base Qty Code Key
10
D
C
S
A
DSA 10 C 150 PB
=
=
=
=
=
=
=
50
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-220AB (3)
509188
min.
-55
0.4
20
Ratings
typ.
0.50
2
max.
150
0.6
tentative
20
60
20100601
Unit
K/W
Nm
°C
N
A
g

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