DSB60C30PB IXYS, DSB60C30PB Datasheet - Page 2

• Manufacturer Part Number: DSB60C30PB
• Manufacturer: IXYS

Specifications of DSB60C30PB

• Vrrm, (v): 30
• Ifavm, D = 0.5, Total, (a): 60
• Ifavm, D = 0.5, Per Diode, (a): 30
• @ Tc, (°c): 130
• Vf, Max, Tvj =125°c, (v): 0.49
• @ If, (a): 30
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 0.85
• Package Style: TO-220AB

Symbol
I
R
T
Weight
M
F
1)
IXYS reserves the right to change limits, conditions and dimensions.
© 2008 IXYS all rights reserved
RMS
C
stg
thCH
D
I
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
RMS
Marking on product
is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
Assembly Code
DateCode
Definition
RMS current
thermal resistance case to heatsink
storage temperature
mounting torque
mounting force with clip
Logo
Standard
Ordering
Product Marking
XXXXXX
abcdef
DSB 60 C 30 PB
YYWW
Part Name
DSB60C30HB
Similar Part
Conditions
per pin
Marking on Product
TO-247
DSB60C30PB
Data according to IEC 60747and per diode unless otherwise specified
1)
Package
Delivering Mode
Voltage class
Tube
30
Part number
PB
Base Qty Code Key
60
30
D
C
S
B
=
=
=
=
=
=
=
50
Diode
Schottky Diode
ultra low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-220AB (3)
DSB 60 C 30 PB
min.
-55
0.4
20
Ratings
typ.
0.50
2
max.
advanced
150
0.8
50
60
20080409
Unit
K/W
Nm
°C
N
A
g