DPF80C200HB IXYS, DPF80C200HB Datasheet - Page 2

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DPF80C200HB

Manufacturer Part Number
DPF80C200HB
Description
Manufacturer
IXYS
Datasheet

Specifications of DPF80C200HB

Vrrm, (v)
200
Ifavm, D = 0.5, Total, (a)
80
Ifavm, D = 0.5, Per Diode, (a)
40
@ Tc, (°c)
140
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj=45°c, (a)
560
Vf, Max, Tvj =150°c, (v)
0.95
@ If, (a)
40
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =100°c, (a)
4.0
@ -di/dt, (a/µs)
200
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.70
Package Style
TO-247AD
Symbol
I
R
T
Weight
M
F
1)
IXYS reserves the right to change limits, conditions and dimensions.
©
RMS
C
stg
thCH
D
I
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
2009 IXYS all rights reserved
RMS
Marking on product
is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
Assembly Code
DateCode
Definition
RMS current
thermal resistance case to heatsink
storage temperature
mounting torque
mounting force with clip
Logo
Standard
Ordering
Product Marking
XXXXXX
YYWW
abcdef
DPF 80 C 200 HB
Part Name
DPF60C200HJ
Similar Part
Conditions
per pin
Marking on Product
ISOPLUS247 (3)
DPF80C200HB
Data according to IEC 60747and per diode unless otherwise specified
1)
Package
Voltage Class
Delivering Mode
200
Tube
Part number
200
HB
Base Qty Code Key
80
D
C
P
F
=
=
=
=
=
=
=
30
DPF 80 C 200 HB
Diode
HiPerFRED
ultra fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-247AD (3)
508214
min.
-55
0.8
20
Ratings
typ.
0.25
6
max.
advanced
150
120
1.2
70
20091020
Unit
K/W
Nm
°C
N
A
g

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