MIEB100W1200TEH IXYS, MIEB100W1200TEH Datasheet - Page 3

• Manufacturer Part Number: MIEB100W1200TEH
• Description: Six-Pack IGBT Modules in E1, E2 and E3-Pack
• Manufacturer: IXYS

Specifications of MIEB100W1200TEH

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 183
• Ic80, Tc = 80°c, Igbt, (a): 128
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.7
• Rthjc, Max, Igbt, (k/w): 0.20
• If25, Tc = 25°c, Diode, (a): 135
• If80, Tc = 80°c, Diode, (a): 90
• Package Style: E3-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Module
Symbol
T
T
T
V
CTI
M
R
d
d
R
Weight
 V
Curves are measured on modul level except Fig. 14 to Fig. 17
Temperature Sensor NTC
Symbol
R
B
VJ
VJM
stg
S
A
ISOL
pin to chip
thCH
25
25/50
d
CE
= V
CE(sat)
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
see 
creep distance on surface
strike distance through air
thermal resistance case to heatsink
Definitions
resistance
+ 2x R
pin to chip
· I
C
Conditions
Conditions
I
with heatsink compound
ISOL
< 1 mA; 50/60 Hz
t = 1 min
t = 1 s
T
T
C
C
MIEB100W1200TEH
= 25°C unless otherwise stated
= 25°C
min.
min.
12.7
4.75
-40
-40
9.6
3
3510
Ratings
typ.
Ratings
typ.
300
5.0
1.8
0.1
max.
max.
3000
3600
5.25
125
150
125
200
6
20101111d
3 - 8
Unit
Unit
K/W
mm
mm
mW
Nm
kW
V~
V~
°C
°C
°C
K
g