MIXA151W1200EH IXYS, MIXA151W1200EH Datasheet - Page 5

• Manufacturer Part Number: MIXA151W1200EH
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA151W1200EH

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 150
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 100
• Eoff, Typ, 125°c (mj): 16
• Rthjc, Typ, Igbt (k/w): 0.18
• Ic80, Fwd, (a): 130
• Rthjc, Fwd, (k/w): 0.28
• Package Style: E3-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[A]
[A]
[mJ]
I
I
Transistor T1 - T6
C
C
E
300
250
200
150
100
300
250
200
150
100
50
50
35
30
25
20
15
10
0
0
5
0
0
5
Fig. 3 Typ. tranfer characteristics
0
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
E
VJ
CE
GE
G
6
off
= 15 V
= 4.7 Ω
= 125°C
T
50
= 600 V
= ±15 V
VJ
= 125°C
7
1
T
100
VJ
= 25°C
8
E
V
rec
V
T
CE
I
VJ
GE
C
150
9
= 25°C
[V]
[A]
E
[V]
on
2
T
10
VJ
200
= 125°C
11
250
3
12
300
13
[mJ]
V
[V]
E
[A]
GE
I
C
Fig. 6 Typ. switching energy vs. gate resistance
300
250
200
150
100
50
20
15
10
22
20
18
16
14
12
10
0
5
0
0
0
0
Fig. 4 Typ. turn-on gate charge
Fig. 2 Typ. output characteristics
T
VJ
I
V
2
= 125°C
C
100
CE
MIXA 151W1200EH
= 600 V
1
= 150 A
V
4
E
E
GE
off
on
200
= 15 V
17 V
19 V
6
R
2
Q
V
G
300
G
CE
8
[Ω]
[nC]
[V]
10
400
3
I
V
V
T
C
CE
GE
VJ
12
=
= 125°C
= 600 V
= ±15 V
13 V
500
150 A
14
4
20110719a
11 V
9 V
5 - 6
600
16