MIXA101W1200EH IXYS, MIXA101W1200EH Datasheet - Page 5
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MIXA101W1200EH
Manufacturer Part Number
MIXA101W1200EH
Description
1200V XPT Modules
Manufacturer
IXYS
Datasheet
1.MIXA101W1200EH.pdf
(6 pages)
Specifications of MIXA101W1200EH
Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
108
Vce(sat), Typ, Tj 25°c (v)
1.8
Eon, Typ, 125°c (mj)
8.5
Eoff, Typ, 125°c (mj)
11
Rthjc, Typ, Igbt (k/w)
0.25
Ic80, Fwd, (a)
135
Rthjc, Fwd, (k/w)
0.4
Package Style
E3-Pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[A]
[A]
[mJ]
I
I
Transistor T1 - T6
C
C
E
200
150
100
200
180
160
140
120
100
50
80
60
40
20
20
18
16
14
12
10
0
0
8
6
4
2
0
0
5
Fig. 3 Typ. tranfer characteristics
0
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
CE
GE
VJ
G
E
T
6
= 15 V
= 6.8 Ω
= 125°C
VJ
off
= 600 V
= ±15 V
40
= 125°C
7
E
1
T
on
VJ
80
8
= 25°C
V
T
V
CE
VJ
I
GE
C
= 25°C
9
[V]
[A]
120
[V]
2
T
10
VJ
= 125°C
160
11
3
12
200
13
[mJ]
V
[V]
E
[A]
GE
I
C
Fig. 6 Typ. switching energy vs. gate resistance
200
150
100
50
20
15
10
16
14
12
10
0
5
0
8
6
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
I
V
V
T
C
T
VJ
CE
GE
VJ
=
= 125°C
I
V
= 600 V
= ±15 V
= 125°C
C
CE
MIXA 101W1200EH
100 A
4
1
= 100 A
= 600 V
100
V
E
E
GE
on
off
= 15 V
8
17 V
19 V
R
2
Q
V
G
200
G
12
CE
[Ω]
[nC]
[V]
16
3
300
13 V
20
4
20110715a
11 V
9 V
5 - 6
400
24