MIXA10WB1200TMH IXYS, MIXA10WB1200TMH Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
MIXA10WB1200TMH
Manufacturer Part Number
MIXA10WB1200TMH
Description
1200V XPT Modules
Manufacturer
IXYS
Datasheet
1.MIXA10WB1200TMH.pdf
(7 pages)
Specifications of MIXA10WB1200TMH
Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
12
Vce(sat), Typ, Tj 25°c (v)
1.8
Eon, Typ, 125°c (mj)
1.1
Eoff, Typ, 125°c (mj)
1.1
Rthjc, Typ, Igbt (k/w)
2.0
Ic80, Fwd, (a)
13
Rthjc, Fwd, (k/w)
2.4
[A]
[A]
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[mJ]
I
I
C
C
E
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
20
16
12
8
4
0
8
4
0
0
5
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. tranfer characteristics
Fig. 5 Typ. switching energy vs. collector current
V
R
V
V
T
GE
VJ
CE
GE
G
T
6
= 15 V
= 100 Ω
VJ
= 125°C
= 600 V
= ±15 V
4
= 125°C
7
1
T
VJ
8
V
8
V
= 25°C
CE
I
C
GE
T
[A]
[V]
VJ
9
[V]
12
= 25°C
2
T
10 11 12
VJ
= 125°C
16
3
20
E
E
off
on
13
[mJ]
E
[A]
V
I
[V]
C
GE
2.0
1.6
1.2
0.8
0.4
0.0
20
16
12
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
8
4
0
5
0
80
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
I
V
V
T
C
VJ
I
V
C
VJ
CE
GE
CE
=
= 125°C
= 125°C
= 600 V
= ±15 V
= 10 A
= 600 V
120
1
MIXA10WB1200TMH
10 A
10
V
GE
= 15 V
R
2
Q
160
V
17 V
19 V
G
G
CE
[Ω ]
[nC]
W
20
[V]
3
200
30
4
E
E
20110916b
11 V
13 V
9 V
on
off
6 - 7
240