MMIX4B20N300 IXYS, MMIX4B20N300 Datasheet - Page 4

• Manufacturer Part Number: MMIX4B20N300
• Description: VHV (2500V-3000V)
• Manufacturer: IXYS

Specifications of MMIX4B20N300

• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 27
• Ic90, Tc=90°c, (a): 15
• Ic110, Tc=110°c, (a): -
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 504
• Tfi Typ, Tj=25°c, (ns): -
• Gate Drive, (v): -
• Rthjc, Max, (k/w): 1.13
• Package Style: MMIX

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
28
24
20
16
12
16
14
12
10
55
50
45
40
35
30
25
20
15
10
8
4
0
5
0
8
6
4
2
0
500
0
0
V
I
I
10
T
R
dv / dt < 10V / ns
5
C
G
CE
J
G
= 20A
= 10mA
= 125ºC
= 1kV
= 20Ω
Fig. 11. Reverse-Bias Safe Operating Area
10
20
1000
15
30
Fig. 7. Transconductance
20
Fig. 9. Gate Charge
40
Q
1500
G
- NanoCoulombs
I
V
C
25
50
CE
- Amperes
- Volts
T
30
60
J
= - 40ºC
2000
35
70
25ºC
40
80
125ºC
2500
45
90
100
50
3000
110
55
10,000
10.00
1,000
1.00
0.10
0.01
100
60
50
40
30
20
10
10
0.0001
0
0.0
0
Fig. 8. Forward Voltage Drop of Intrinsic Diode
f
Fig. 12. Maximum Transient Thermal Impedance
= 1 MHz
5
0.5
0.001
10
1.0
Pulse Width - Seconds
Fig. 10. Capacitance
15
0.01
MMIX4B20N300
V
V
CE
F
T
- Volts
J
1.5
- Volts
20
= 25ºC
0.1
25
2.0
C ies
C oes
C res
30
T
J
= 125ºC
1
2.5
35
3.0
10
40