MMIX4B12N300 IXYS, MMIX4B12N300 Datasheet - Page 5

• Manufacturer Part Number: MMIX4B12N300
• Description: VHV (2500V-3000V)
• Manufacturer: IXYS

Specifications of MMIX4B12N300

• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 22
• Ic90, Tc=90°c, (a): 12
• Ic110, Tc=110°c, (a): -
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 540
• Tfi Typ, Tj=25°c, (ns): -
• Gate Drive, (v): -
• Rthjc, Max, (k/w): 1.25

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18
16
14
12
10
16
14
12
10
35
30
25
20
15
10
8
6
4
2
0
8
6
4
2
0
5
0
500
0
0
V
I
I
5
T
R
dv / dt < 10V / ns
C
G
CE
J
G
5
= 12A
= 10mA
= 125ºC
= 30Ω
= 1kV
10
Fig. 11. Reverse-Bias Safe Operating Area
1000
10
15
Fig. 7. Transconductance
20
15
Fig. 9. Gate Charge
Q
25
1500
G
- NanoCoulombs
I
V
C
20
CE
- Amperes
30
- Volts
35
25
2000
40
T
J
= - 40ºC
30
45
125ºC
25ºC
50
35
2500
55
40
60
3000
65
45
10,000
1,000
0.01
0.1
100
10
0.00001
10
36
32
28
24
20
16
12
2
1
8
4
0
0
0
Fig. 12. Maximum Transient Thermal Impedance
f = 1 MHz
Fig. 12. Maximum Transient Thermal Impedance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0.0001
5
0.5
10
0.001
1
Pulse Width - Seconds
Fig. 10. Capacitance
15
C oes
C res
C ies
V
T
V
MMIX4B12N300
J
CE
F
a a a a a
= 25ºC
0.01
- Volts
1.5
- Volts
20
25
0.1
2
30
T
J
= 125ºC
2.5
1
35
10
40
3