IXBL64N250 IXYS, IXBL64N250 Datasheet - Page 4
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IXBL64N250
Manufacturer Part Number
IXBL64N250
Description
VHV (2500V-3000V)
Manufacturer
IXYS
Datasheet
1.IXBL64N250.pdf
(5 pages)
Specifications of IXBL64N250
Vces, (v)
2500
Ic25, Tc=25°c, (a)
116
Ic110, Tc=110°c, (a)
46
Vce(sat), Typ, Tj=25°c, (v)
3
Tf Typ, Tj=25°c, (ns)
170
Rthjc, Max, (k/w)
0.25
Package Style
ISOPLUS I5-PAK
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
180
160
140
120
100
100
90
80
70
60
50
40
30
20
10
16
14
12
10
80
60
40
20
8
6
4
2
0
0
0
250
0
0
V
I
I
C
G
CE
T
R
dv / dt < 10V / ns
500
50
J
= 64A
= 10mA
G
= 600V
= 125ºC
= 1Ω
20
Fig. 11. Reverse-Bias Safe Operating Area
100
750
40
Fig. 7. Transconductance
1000
150
Fig. 9. Gate Charge
Q
G
I
C
- NanoCoulombs
60
1250
- Amperes
200
V
T
CE
J
= - 40ºC
- Volts
1500
250
80
25ºC
125ºC
1750
300
100
2000
350
120
2250
400
2500
140
450
100,000
0.0001
10,000
0.001
1,000
200
180
160
140
120
100
0.01
80
60
40
20
100
0.1
0.00001
0
10
1
0.4
0
0.6
f = 1 MHz
Fig. 12. Maximum Transient Thermal Impedance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
5
0.0001
0.8
1.0
10
0.001
1.2
Fig. 10. Capacitance
Pulse Width - Seconds
15
1.4
V
V
T
F
CE
J
- Volts
0.01
1.6
= 25ºC
- Volts
20
IXBL64N250
1.8
25
2.0
0.1
2.2
30
T
C res
C ies
C oes
J
= 125ºC
2.4
1
35
2.6
2.8
40
10