IXBT24N170 IXYS, IXBT24N170 Datasheet - Page 4

• Manufacturer Part Number: IXBT24N170
• Description: HV (1600V-1700V)
• Manufacturer: IXYS

Specifications of IXBT24N170

• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 60
• Ic90, Tc=90°c, (a): 24
• Vce(sat), Typ, Tj=25°c, (v): 2.5
• Tf Typ, Tj=25°c, (ns): 750
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
50
45
40
35
30
25
20
15
10
16
14
12
10
60
50
40
30
20
10
5
0
8
6
4
2
0
0
200
0
0
T
R
dv / dt < 10V / ns
V
I
I
10
C
G
J
G
CE
= 125ºC
= 24A
= 10mA
= 10Ω
400
= 850V
20
Fig. 11. Reverse-Bias Safe Operating Area
20
600
30
40
Fig. 7. Transconductance
40
Fig. 9. Gate Charge
800
Q
G
60
50
- NanoCoulombs
I
V
C
CE
- Amperes
1000
- Volts
60
80
70
1200
100
80
T
J
= - 40ºC
1400
125ºC
90
25ºC
120
100
1600
110
140
1800
120
10,000
1,000
1.000
0.100
0.010
0.001
100
80
70
60
50
40
30
20
10
10
0.00001
0
0.0
0
f = 1 MHz
Fig. 12. Maximum Transient Thermal Impedance
0.4
5
0.0001
Fig. 8. Forward Voltage Drop of
0.8
10
0.001
Fig. 10. Capacitance
1.2
Pulse Width - Seconds
15
Intrinsic Diode
V
V
CE
F
- Volts
1.6
0.01
20
- Volts
2.0
25
0.1
C ies
C oes
C res
IXBH24N170
IXBT24N170
T
J
= 125ºC
2.4
30
1
2.8
35
T
J
= 25ºC
3.2
40
10