IXBT16N170 IXYS, IXBT16N170 Datasheet - Page 4

• Manufacturer Part Number: IXBT16N170
• Description: HV (1600V-1700V)
• Manufacturer: IXYS

Specifications of IXBT16N170

• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 40
• Ic90, Tc=90°c, (a): 16
• Vce(sat), Typ, Tj=25°c, (v): 3.3
• Tf Typ, Tj=25°c, (ns): 705
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.50
• Package Style: TO-268

IXYS reserves the right to change limits, test conditions and dimensions.
16
14
12
10
45
40
35
30
25
20
15
10
24
22
20
18
16
14
12
10
8
6
4
2
0
5
0
8
6
4
2
0
200
0
0
Fig. 11. Reverse-Bias Safe Operating Area
V
I
I
T
R
dV / dt < 10V / ns
C
G
5
CE
400
10
J
G
= 16A
= 10mA
= 125ºC
= 850V
= 22Ω
10
600
Fig. 7. Transconductance
20
15
Fig. 9. Gate Charge
Q
800
20
30
G
- NanoCoulombs
V
I
C
CE
25
- Amperes
1000
- Volts
40
30
1200
50
35
1400
40
60
T
J
= - 40ºC
45
125ºC
1600
25ºC
70
50
1800
80
55
10,000
1.000
0.100
0.010
0.001
1,000
100
50
45
40
35
30
25
20
15
10
10
0.00001
5
0
0.6
0
Fig. 12. Maximum Transient Thermal
f
0.8
= 1 MHz
5
0.0001
Fig. 8. Forward Voltage Drop of
1.0
10
1.2
0.001
Fig. 10. Capacitance
T
Pulse Width - Seconds
J
Intrinsic Diode
Impedance
= 125ºC
15
1.4
C res
V
V
CE
F
C oes
- Volts
0.01
1.6
20
- Volts
C ies
1.8
T
J
25
= 25ºC
0.1
IXBH16N170
IXBT16N170
2.0
30
IXYS REF: B_16N170(4A)10-06-08
2.2
1
35
2.4
2.6
10
40