MMIX1G75N250 IXYS, MMIX1G75N250 Datasheet - Page 4
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MMIX1G75N250
Manufacturer Part Number
MMIX1G75N250
Description
VHV NPT IGBTs (2500V - 4000V)
Manufacturer
IXYS
Datasheet
1.MMIX1G75N250.pdf
(6 pages)
Specifications of MMIX1G75N250
Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
110
Ic110, Tc=110°c, Igbt, (a)
65
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.9
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Tf, Typ, Igbt, (ns)
175455
Rthjc, Max, Igbt, (k/w)
0.29
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
300
250
200
150
100
250
200
150
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
50
0
0
3.5
-50
0
V
GE
4.0
0.5
= 15V
-25
Fig. 1. Output Characteristics @ T
4.5
1
Fig. 3. Dependence of V
0
5.0
1.5
Fig. 5. Input Admittance
Junction Temperature
T
T
5.5
J
J
25
- Degrees Centigrade
= 125ºC
2
V
V
- 40ºC
CE
25ºC
GE
6.0
- Volts
- Volts
2.5
50
6.5
I
C
3
= 300A
I
C
75
7.0
= 150A
V
CE(sat)
I
GE
C
3.5
= 75A
= 25V
7.5
20V
J
100
on
= 25ºC
4
8.0
125
15V
10V
4.5
8.5
5V
9.0
150
5
120
100
300
250
200
150
100
80
60
40
20
50
0
0
8
7
6
5
4
3
2
1
0
0
6
0.5
8
Fig. 2. Output Characteristics @ T
1
50
10
Fig. 4. Collector-to-Emitter Voltage
1.5
vs. Gate-to-Emitter Voltage
12
Fig. 6. Transconductance
2
100
I
MMIX1G75N250
14
V
C
V
2.5
CE
GE
- Amperes
- Volts
- Volts
I
C
16
3
= 300A
150A
75A
3.5
150
18
V
4
GE
20
= 25V
J
20V
15V
T
4.5
J
= 125ºC
= - 40ºC
200
22
5
T
25ºC
125ºC
J
= 25ºC
24
5.5
15V
10V
5V
250
26
6