IXGH2N250 IXYS, IXGH2N250 Datasheet - Page 3
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IXGH2N250
Manufacturer Part Number
IXGH2N250
Description
VHV NPT IGBTs (2500V - 4000V)
Manufacturer
IXYS
Datasheet
1.IXGT2N250.pdf
(5 pages)
Specifications of IXGH2N250
Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
5.5
Ic110, Tc=110°c, Igbt, (a)
2
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.1
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (k/w)
3.9
Package Style
TO-247
© 2009 IXYS CORPORATION, All Rights Reserved
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
0.0
0.0
6
0.5
0.5
7
1.0
Fig. 5. Collector-to-Emitter Voltage
8
1.0
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
1.5
9
1.5
2.0
V
V
V
CE
10
CE
GE
@ 125ºC
@ 25ºC
- Volts
- Volts
2.0
2.5
- Volts
11
I
V
C
GE
3.0
= 4A
V
2A
1A
2.5
GE
= 25V
15V
20V
= 25V
12
20V
15V
3.5
3.0
13
4.0
10V
5V
T
J
10V
5V
= 25ºC
3.5
14
4.5
5.0
4.0
15
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
28
24
20
16
12
8
7
6
5
4
3
2
1
0
8
4
0
-50
3
0
V
GE
2
4
-25
= 15V
Fig. 2. Extended Output Characteristics
4
5
Fig. 4. Dependence of V
0
6
Fig. 6. Input Admittance
Junction Temperature
6
T
J
25
- Degrees Centigrade
8
V
V
7
CE
@ 25ºC
GE
- Volts
10
50
- Volts
V
GE
I
8
I
I
C
= 25V
C
C
15V
12
= 4A
20V
10V
= 2A
= 1A
T
75
J
CE(sat)
= - 40ºC
9
125ºC
IXGH2N250
IXGT2N250
14
25ºC
100
on
10
16
IXYS REF: G_2N250(2P)6-17-09
125
11
18
150
12
20