IXGT2N250 IXYS, IXGT2N250 Datasheet - Page 5

• Manufacturer Part Number: IXGT2N250
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of IXGT2N250

• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 5.5
• Ic110, Tc=110°c, Igbt, (a): 2
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.1
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 3.9
• Package Style: TO-268

© 2009 IXYS CORPORATION, All Rights Reserved
10,000
200
180
160
140
120
100
280
260
240
220
200
180
160
140
120
100
1,000
80
60
40
20
80
60
100
10
25
50
1.0
T
R
V
V
t
T
V
r
J
J
75
G
GE
CE
CE
35
= 25ºC
= 125ºC, V
= 50Ω
Fig. 14. Resistive Turn-on Switching Times
Fig. 16. Resistive Turn-off Switching Times
= 15V
= 1800V
= 1800V
1.5
100
45
Fig. 12. Resistive Turn-on Rise Time
GE
t
d(on
125
= 15V
I
vs. Junction Temperature
55
C
)
vs. Collector Current
vs. Gate Resistance
= 4A, 2A
2.0
- - - -
T
J
150
- Degrees Centigrade
65
R
I
C
G
- Amperes
I
- Ohms
I
175
C
C
2.5
= 2A
= 4A
75
200
T
R
V
t
J
f
G
CE
= 125ºC
85
= 50Ω, V
= 1800V
3.0
225
95
GE
t
250
d(off
= 15V
3.5
105
)
- - - -
275
115
300
4.0
58
54
50
46
42
38
34
30
26
22
18
14
90
80
70
60
125
200
180
160
140
120
100
500
450
400
350
300
250
200
150
100
350
300
250
200
150
100
80
60
40
20
50
50
0
0
1.0
50
25
T
V
t
t
R
V
R
V
V
f
J
CE
75
f
CE
35
G
GE
CE
Fig. 17. Resistive Turn-off Switching Times
G
Fig. 15. Resistive Turn-off Switching Times
= 125ºC, V
= 50Ω, V
= 50Ω
= 1800V
= 1800V
= 15V
= 1800V
1.5
100
45
Fig. 13. Resistive Turn-on Rise Time
GE
GE
vs. Junction Temperature
t
t
125
= 15V
d(off
d(off)
55
= 15V
vs. Gate Resistance
)
2.0
- - - -
vs. Collector Current
T
- - - -
J
150
65
- Degrees Centigrade
R
G
I
- Ohms
C
175
75
- Amperes
2.5
I
C
= 2A
200
T
I
J
T
85
C
J
= 125ºC
= 4A
= 25ºC
225
95
3.0
IXGH2N250
IXGT2N250
250
105
I
I
C
C
275
3.5
115
= 2A
= 4A
IXYS REF: G_2N250(2P)6-17-09
300
125
220
200
180
160
140
120
100
80
60
40
20
90
85
80
75
70
65
60
55
4.0