IXGK82N120A3 IXYS, IXGK82N120A3 Datasheet - Page 4

• Manufacturer Part Number: IXGK82N120A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGK82N120A3

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 260
• Ic110, Tc=110°c, Igbt, (a): 82
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.05
• Tfi, Typ, Tj=25°c, Igbt, (ns): 780
• Eoff, Typ, Tj=125°c, Igbt, (mj): 22.5
• Rthjc, Max, Igbt, (°c/w): 0.1
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.000
0.100
0.010
0.001
0.200
100
100
80
60
40
20
0.00001
0
0
0
f
= 1 MHz
20
5
40
10
Fig. 7. Transconductance
60
Fig. 9. Capacitance
15
80
0.0001
I
V
C
CE
- Amperes
100
- Volts
20
C res
120
C oes
25
C ies
T
J
Fig. 11. Maximum Transient Thermal Impedance
140
= - 40ºC
125ºC
30
25ºC
160
0.001
35
180
Pulse Width - Second
200
40
180
160
140
120
100
16
14
12
10
80
60
40
20
0
8
6
4
2
0
200
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
CE
J
300
G
0.01
= 82A
= 10mA
= 125ºC
= 2Ω
= 600V
50
Fig. 10. Reverse-Bias Safe Operating Area
400
100
500
Fig. 8. Gate Charge
Q
G
600
150
- NanoCoulombs
V
CE
700
- Volts
0.1
200
IXGK82N120A3
IXGX82N120A3
800
900
250
1000
300
1100
1200
350
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