IXGX120N120B3 IXYS, IXGX120N120B3 Datasheet
IXGX120N120B3
Manufacturer Part Number
IXGX120N120B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet
1.IXGX120N120B3.pdf
(2 pages)
Specifications of IXGX120N120B3
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
200
Ic90, Tc=90°c, Igbt, (a)
120
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Tj=25°c, Igbt, (ns)
145
Eoff, Typ, Tj=125°c, Igbt, (mj)
10.3
Rthjc, Max, Igbt, (°c/w)
0.15
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
PLUS247
GenX3
High Speed Low Vsat PT IGBTs
for 3-20 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C90
LRMS
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Continuous
Transient
T
T
Terminal Current Limit
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
TO-264
PLUS247
I
I
V
V
I
Test Conditions
T
T
Test Conditions
C
C
C
C
C
C
C
J
J
GE
CE
CE
1200V IGBTs
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C ( Chip Capability )
= 90°C
= 25°C, 1ms
= 15V, T
= 25°C
= 250μA, V
= 1mA, V
= V
= 0V, V
= 100A, V
CES,
VJ
V
GE
GE
CE
= 125°C, R
= ±20V
GE
CE
= V
= 0V
= 15V, Note 1
= 0V
GE
GE
= 1MΩ
G
= 2Ω
Advance Technical Information
T
J
= 125°C
IXGK120N120B3
IXGX120N120B3
20..120/4.5..27
1200
Characteristic Values
Min.
3.0
V
-55 ... +150
-55 ... +150
CES
Maximum Ratings
I
CM
1.13/10
< 1200
= 240
1200
1200
±20
±30
200
120
120
150
260
370
830
300
Typ.
10
2.4
6
±400 nA
Nm/lb.in.
Max.
5.0
3.0
50 μA
5 mA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
A
g
g
V
I
V
TO-264 (IXGK)
PLUS 247
G = Gate
C = Collector
Features
Advantages
Applications
C90
Optimized for Low Conduction and
Switching Losses
Square RBSOA
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
C
C
TM
≤ ≤ ≤ ≤ ≤ 3.0V
E
= 1200V
= 120A
E
E
(IXGX)
E
TAB = Collector
DS100152(05/09)
(TAB)
(TAB)
= Emitter
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IXGX120N120B3 Summary of contents
Page 1
... CES 0V ±20V GES 100A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGK120N120B3 IXGX120N120B3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 200 120 120 370 = 2Ω 240 < 1200 CES 830 -55 ...
Page 2
... CES . G 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGK120N120B3 IXGX120N120B3 TO-264 (IXGK) Outline Max 0.15 °C/W °C/W PLUS 247 (IXGX) Outline TM Terminals Gate ...