IXGH30N120B3 IXYS, IXGH30N120B3 Datasheet - Page 4
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IXGH30N120B3
Manufacturer Part Number
IXGH30N120B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet
1.IXGH30N120B3.pdf
(6 pages)
Specifications of IXGH30N120B3
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
204
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.1
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH30N120B3D1
Manufacturer:
SEIKO
Quantity:
14 600
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
24
20
16
12
100
8
4
0
10
0.0001
0
0
f
= 1 MHz
10
5
10
20
Fig. 7. Transconductance
Fig. 9. Capacitance
15
30
0.001
I
C
V
CE
- Amperes
T
J
- Volts
20
= - 40ºC
40
25ºC
125ºC
25
C oes
C res
C ies
Fig. 11. Maximum Transient Thermal Impedance
50
30
60
0.01
35
Pulse Width - Seconds
70
40
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
T
R
dv / dt < 10V / ns
IXGA30N120B3 IXGP30N120B3
300
V
I
I
J
G
C
G
CE
0.1
= 125ºC
10
= 5Ω
= 30A
= 10mA
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
400
20
500
30
Fig. 8. Gate Charge
Q
600
G
- NanoCoulombs
V
40
CE
700
- Volts
1
50
800
IXGH30N120B3
900
60
1000
70
1100
80
1200
10
90