IXGA20N120B3 IXYS, IXGA20N120B3 Datasheet - Page 3
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IXGA20N120B3
Manufacturer Part Number
IXGA20N120B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet
1.IXGA20N120B3.pdf
(6 pages)
Specifications of IXGA20N120B3
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
36
Ic90, Tc=90°c, Igbt, (a)
20
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.10
Tfi, Typ, Tj=25°c, Igbt, (ns)
155
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.63
Rthjc, Max, Igbt, (°c/w)
0.69
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-263
© 2009 IXYS CORPORATION, All Rights Reserved
32
28
24
20
16
12
32
28
24
20
16
12
8
7
6
5
4
3
2
1
8
4
0
8
4
0
0.0
0.0
5
0.5
0.5
6
Fig. 5. Collector-to-Emitter Voltage
1.0
7
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
1.0
vs. Gate-to-Emitter Voltage
1.5
8
1.5
8A
V
2.0
16A
9
V
CE
V
@ 125ºC
2.0
CE
@ 25ºC
GE
I
- Volts
C
- Volts
2.5
10
= 32A
- Volts
V
2.5
GE
V
3.0
GE
11
= 15V
13V
11V
= 15V
3.0
13V
11V
3.5
12
T
3.5
J
5V
4.0
9V
7V
13
= 25ºC
7V
5V
9V
4.0
4.5
14
5.0
4.5
15
140
120
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
40
35
30
25
20
15
10
0
5
0
-50
4.0
0
V
GE
4.5
Fig. 2. Extended Output Characteristics
-25
= 15V
4
Fig. 4. Dependence of V
5.0
T
0
Fig. 6. Input Admittance
J
Junction Temperature
8
5.5
= - 40ºC
T
V
125ºC
J
GE
25ºC
- Degrees Centigrade
25
= 15V
V
6.0
CE
12
11V
13V
V
@ 25ºC
9V
7V
GE
- Volts
6.5
50
- Volts
16
I
IXGA20N120B3
IXGP20N120B3
C
7.0
= 8A
75
I
C
= 16A
CE(sat)
7.5
20
I
100
C
= 32A
8.0
on
24
125
8.5
150
9.0
28