IXGH12N100AU1 IXYS, IXGH12N100AU1 Datasheet
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IXGH12N100AU1
Specifications of IXGH12N100AU1
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IXGH12N100AU1 Summary of contents
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... ± GES CE(sat) C CE90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings 1000 = 1 MW 1000 GE ±20 ± 150 ...
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... Min. Typ. 6 125°C 120 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH12N100AU1 TO-247 AD (IXGH) Outline Max Dim. Millimeter ns Min. Max ...
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... V - Volts GE Figure 5. Admittance Curves © 2000 IXYS All rights reserved IXGH12N100U1 125° IXGH12N100AU1 100 T = 25° Volts CE Figure 2. Extended Output Characteristics 1 15V 1.4 1 1.0 ...
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... IXGH12N100U1 (OFF OFF Duty Cycle 0.001 Pulse Width - Seconds Figure 11. Transient Thermal Resistance IXGH12N100AU1 1000 t fi 800 600 400 E (OFF) 200 Ohms G Figure 8. Dependence of tfi and E 100 125°C ...
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... Fig. 18. Transient thermal impedance junction to case. © 2000 IXYS All rights reserved IXGH12N100U1 Fig. 13. Recovery charge versus -di /dt. F Fig. 16. Reverse recovery time . versus -di /dt F IXGH12N100AU1 Fig. 14. Peak reverse current versus -di /dt. F Fig. 17. Forward voltage recovery and time versus -di /dt ...