IXGX50N90B2D1 IXYS, IXGX50N90B2D1 Datasheet - Page 4
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IXGX50N90B2D1
Manufacturer Part Number
IXGX50N90B2D1
Description
Mid-Frequency Range (15khz-40khz), w/ Diode
Manufacturer
IXYS
Datasheet
1.IXGX50N90B2D1.pdf
(7 pages)
Specifications of IXGX50N90B2D1
Vces, (v)
900
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
200
Eoff, Typ, Tj=125°c, Igbt, (mj)
8.7
Rthjc, Max, Igbt, (°c/w)
0.31
If, Tj=110°c, Diode, (a)
15
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
PLUS247
IXYS reserves the right to change limits, test conditions, and dimensions.
1300
1200
1100
1000
900
800
700
600
500
400
300
200
55
50
45
40
35
30
25
20
15
10
20
18
16
14
12
10
5
0
8
6
4
2
0
20
0
5
R
V
V
t
t
T
V
V
Fig. 11. Dependence of Turn-off
25
Fig. 9. Dependence of Turn-Off
d(off)
fi
10
J
GE
CE
30
GE
CE
G
Fig. 7. Transconductance
= 125ºC
- - - - - -
= 5Ω
= 15V
= 720V
= 15V
= 720V
50
Sw itching Tim e on R
15
T
40
J
Energy Loss on I
= -40
125
75
20
25
I
I
50
C
R
º
º
C
º
I
C
C
- Amperes
C
C
G
100
- Amperes
25
= 25A
100A
- Ohms
50A
60
125
30
T
J
70
= 125
150
35
C
º
G
80
C
T
I
175
C
J
40
= 25
= 100A
50A
25A
90
200
45
º
C
100
225
50
IXGH 50N90B2D1 IXGK 50N90B2D1
600
550
500
450
400
350
300
250
200
150
20
18
16
14
12
10
40
35
30
25
20
1 5
1 0
8
6
4
2
0
5
0
25
20
0
T
V
V
Fig. 12. Dependence of Turn-off
Fig. 10. Dependence of Turn-off
35
Fig. 8. Dependence of Turn-off
R
V
V
J
GE
CE
Energy Loss on Tem perature
30
GE
CE
G
= 125
= 5Ω
= 15V
= 720V
45
30
= 15V
= 720V
Sw itching Tim e on I
T
t
R
V
40
d(off)
Energy Loss on R
º
J
CE
G
C
55
- Degrees Centigrade
= 5Ω, V
= 720V
I
50
C
R
65
60
- Amperes
G
- Ohms
IXGX 50N90B2D1
GE
T
75
J
60
t
fi
= 25
= 15V
I
- - - - -
T
C
J
85
= 100A
90
I
= 125
º
C
I
70
C
C
= 50A
I
= 25A
C
95
G
º
= 100A
C
C
80
I
C
105 115 125
I
1 20
= 50A
C
= 25A
90
100
1 50