IXGR72N60A3 IXYS, IXGR72N60A3 Datasheet - Page 2

• Manufacturer Part Number: IXGR72N60A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGR72N60A3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 52
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 250
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6.5
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: ISOPLUS247

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Notes:1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
on
off
on
off
ies
oes
res
thJC
thCS
g
ge
gc
J
= 25°C unless otherwise specified)
Inductive Load
I
V
Inductive Load, T
I
V
Test Conditions
I
V
I
C
C
C
C
CE
CE
CE
= 60A, V
= 50A, V
= 50A, V
= 60A, V
= 480V, R
= 480V, R
= 25V, V
CE
GE
GE
GE
GE
= 10V, Note 1
= 15V
= 15V
= 15V, V
G
G
= 0V, f = 1MHz
= 3Ω
= 3Ω
4,835,592
4,881,106
J
= 125°C
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
CES
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Min.
48
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
6600
0.15
Typ.
360
230
320
250
510
375
1.4
3.5
2.6
6.5
75
80
40
80
31
34
29
32
0.62 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
°C/W
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
nS
pF
ns
ns
ns
ns
ns
ns
ns
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS247 (IXGR) Outline
6,727,585
6,771,478 B2 7,071,537
IXGR72N60A3
7,005,734 B2
7,063,975 B2
7,157,338B2