IXGH64N60B3 IXYS, IXGH64N60B3 Datasheet - Page 6

• Manufacturer Part Number: IXGH64N60B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGH64N60B3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 88
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.95
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247

IXYS reserves the right to change limits, test conditions and dimensions.
130
120
110
100
90
80
70
60
50
40
30
20
10
75
70
65
60
55
50
45
40
35
30
25
20
15
0
20
Fig. 20. Inductive Turn-on Switching Times
Fig. 18. Inductive Turn-on Switching Times
t
T
V
t
R
V
25ºC < TJ < 125ºC
r
J
CE
r
25
CE
G
= 125ºC, V
= 480V
I
= 3
= 480V
C
5
30
Ω
= 42A
,
I
35
C
t
V
t
GE
d(on)
d(on
10
GE
= 21A
vs. Collector Current
vs. Gate Resistance
40
= 15V
= 15V
)
- - - -
- - - -
I
R
C
45
G
- Amperes
15
- Ohms
50
55
20
I
60
C
= 84A
65
25
70
75
30
80
35
85
80
75
70
65
60
55
50
45
40
35
30
25
20
32
31
30
29
28
27
26
25
24
23
22
21
20
90
80
70
60
50
40
30
20
10
0
25
Fig. 19. Inductive Turn-on Switching Times
t
R
V
r
G
CE
35
= 3
= 480V
Ω
45
vs. Junction Temperature
V
t
GE
d(on)
T
J
55
= 15V
- Degrees Centigrade
- - - -
65
75
85
I
I
I
C
C
C
= 84A
= 42A
= 21A
95
IXYS REF: G_64N60B3(75) 4-09-08-A
IXGH64N60B3
IXGT64N60B3
105
115
125
30
29
28
27
26
25
24
23
22
21