IXGT64N60B3 IXYS, IXGT64N60B3 Datasheet - Page 3

• Manufacturer Part Number: IXGT64N60B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGT64N60B3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 88
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.95
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268

© 2008 IXYS CORPORATION, All rights reserved
100
100
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0.0
5
0.2
0.2
6
Fig. 5. Collector-to-Emitter Voltage
0.4
0.4
Fig. 1. Output Characteristics
7
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
0.6
0.6
I
C
8
= 100A
0.8
0.8
50A
25A
V
V
V
9
CE
CE
GE
@ 125ºC
@ 25ºC
1.0
1.0
- Volts
- Volts
- Volts
10
1.2
1.2
11
V
GE
1.4
1.4
V
= 15V
GE
12
11V
= 15V
1.6
1.6
11V
T
J
13
= 25ºC
1.8
1.8
9V
7V
5V
14
2.0
2.0
7V
5V
9V
2.2
2.2
15
300
250
200
150
100
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
200
180
160
140
120
100
50
80
60
40
20
0
0
4.0
-50
0
V
Fig. 2. Extended Output Characteristics
4.5
GE
-25
= 15V
1
Fig. 4. Dependence of V
5.0
V
Fig. 6. Input Admittance
0
GE
Junction Temperature
T
= 15V
5.5
J
2
13V
11V
- Degrees Centigrade
T
25
J
V
V
CE
GE
= 125ºC
6.0
@ 25ºC
- 40ºC
- Volts
25ºC
- Volts
50
9V
7V
3
I
6.5
C
= 25A
75
IXGT64N60B3
IXGH64N60B3
7.0
4
CE(sat)
I
100
C
= 50A
7.5
I
on
C
5
= 100A
125
8.0
150
8.5
6