IXGX320N60B3 IXYS, IXGX320N60B3 Datasheet

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IXGX320N60B3

Manufacturer Part Number
IXGX320N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGX320N60B3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
500
Ic90, Tc=90°c, Igbt, (a)
320
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.6
Tfi, Typ, Tj=25°c, Igbt, (ns)
165
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.4
Rthjc, Max, Igbt, (°c/w)
0.073
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
PLUS247
GenX3
IGBTs
Medium-Speed Low-Vsat PT
IGBTs for 5-40 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C90
LRMS
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
Continuous
Transient
T
T
Terminal Current Limit
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
TO-264
PLUS247
I
I
V
V
I
I
T
T
Test Conditions
C
C
C
C
C
C
C
C
J
J
GE
CE
CE
600V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C ( Chip Capability )
= 90°C
= 25°C, 1ms
= 15V, T
= 25°C
= 1mA, V
= 4mA, V
= V
= 0V, V
= 100A, V
= 320A
CES
, V
VJ
GE
GE
CE
= 125°C, R
GE
= ± 20V
GE
= 0V
= V
= 0V
= 15V, Note 1
GE
GE
= 1MΩ
G
= 1Ω
Preliminary Technical Information
T
J
= 125°C
IXGK320N60B3
IXGX320N60B3
20..120/4.5..27
Min.
600
Characteristic Values
3.0
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CE
CM
1.13/10
< V
= 320
1200
1700
600
600
±20
±30
500
160
150
260
300
320
Typ.
CES
10
1.4
2.0
6
±400 nA
Nm/lb.in.
Max.
1.6
5.0
75 μA
2 mA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
A
V
g
g
V
I
V
TO-264 (IXGK)
PLUS247 (IXGX)
G = Gate
C = Collector
Features
Advantages
Applications
C90
Optimized for Low Conduction and
Switching Losses
High Current Capability
Square RBSOA
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
C
E
C
E
≤ ≤ ≤ ≤ ≤ 1.6V
= 600V
= 320A
E
Tab = Collector
Tab
Tab
DS100157A(05/10)
= Emitter

Related parts for IXGX320N60B3

IXGX320N60B3 Summary of contents

Page 1

... 0V ± 20V GES 100A 15V, Note 1 CE(sat 320A C © 2010 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGK320N60B3 IXGX320N60B3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 500 320 160 1200 = 1Ω 320 < ...

Page 2

... V 105 CE CES 215 44 66 2.7 250 165 3 3.5 330 265 5.4 0.15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGK320N60B3 IXGX320N60B3 TO-264 AA ( IXGK) Outline Max Dim. Millimeter Min. Max 4.82 5.13 A1 2.54 2. 2.00 2.10 b 1.12 1. ...

Page 3

... C 2.0 1 80A C 1.0 75 100 125 150 280 240 T = 125ºC J 200 25ºC - 40ºC 160 120 80 40 6.0 6.5 7.0 7.5 IXGK320N60B3 IXGX320N60B3 Fig. 2. Output Characteristics @ 15V GE 11V 0 Volts CE Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage I = 320A C 160A 80A ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 100,000 10,000 1,000 100 10 400 500 600 0.1 0.01 0.001 400 450 500 550 600 650 0.00001 IXGK320N60B3 IXGX320N60B3 Fig. 8. Capacitance MHz Volts CE Fig. 10. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 Pulse Width - Second C ies C oes ...

Page 5

... IXGK320N60B3 IXGX320N60B3 Fig. 12. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 480V 125º 25ºC ...

Page 6

... IXGK320N60B3 IXGX320N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Collector Current d(on 1Ω 15V 480V 25º 125º ...

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